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Thermally Activated Delayed Fluorescence Sensitization for Highly Efficient Blue Fluorescent Emitters

Journal Article · · Advanced Functional Materials
 [1];  [2];  [2];  [2];  [2];  [3];  [2];  [2];  [3]
  1. Georgia Inst. of Technology, Atlanta, GA (United States); Univ. of Arizona, Tucson, AZ (United States); University of Arizona
  2. Georgia Inst. of Technology, Atlanta, GA (United States)
  3. Georgia Inst. of Technology, Atlanta, GA (United States); Univ. of Arizona, Tucson, AZ (United States)
Hyperfluorescence is emerging as a powerful strategy to develop optoelectronic devices with high-color purity and enhanced stability. It requires appropriate integration of a sensitizer displaying efficient thermally activated delayed fluorescence (TADF) and an emitter displaying strong, narrow-band fluorescence. Here, through a joint computational and experimental approach, we provide an unprecedented, end-to-end systems level description of the electronic and optical processes that take place in a hyperfluorescent emissive layer composed of a TADF sensitizer, bis(2,5-di(9H-carbazol-9-yl)phenyl)-1,3,4-oxadiazole (4CzDPO), and a fluorescent emitter, 2,5,8,11-tetra-tert-butylperylene (TBPe). We combine the photophysical properties measurement of the emissive layer with the computational determination of the electronic properties, film morphology, and excitation transfer phenomena. The Förster resonance energy transfer rates from 4CzDPO to TBPe are on the order of 1011 s–1, considerably higher than the radiative and non-radiative recombination rates for 4CzDPO. These features ensure nearly complete energy transfer to TBPe, leading to a five-fold increase in the photoluminescence quantum yields in the 4CzDPO:TBPe system in comparison to neat films of 4CzDPO. Furthermore, our approach highlights the factors that can provide efficient energy transfer from TADF molecules to fluorescent emitters, suppress energy transfer among TADF molecules, and avoid the need for a host material within the emissive layer.
Research Organization:
Georgia Inst. of Technology, Atlanta, GA (United States)
Sponsoring Organization:
Dept. of the Defense, Defense Threat Reduction Agency; USDOE; USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Grant/Contract Number:
EE0008205
OSTI ID:
1767761
Alternate ID(s):
OSTI ID: 1785793
Journal Information:
Advanced Functional Materials, Journal Name: Advanced Functional Materials Journal Issue: 52 Vol. 30; ISSN 1616-301X
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English

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