Room-Temperature Spin-Orbit Torque from Topological Surface States

Wu, Hao; Zhang, Peng; Deng, Peng; Lan, Qianqian; Pan, Quanjun; Razavi, Seyed Armin; Che, Xiaoyu; Huang, Li; Dai, Bingqian; Wong, Kin; Han, Xiufeng; Wang, Kang L.

doi:10.1103/PhysRevLett.123.207205

Room-Temperature Spin-Orbit Torque from Topological Surface States

Journal Article · Fri Nov 15 00:00:00 EST 2019 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.123.207205· OSTI ID:1767752

^[1]; Zhang, Peng ^[2]; Deng, Peng ^[2]; Lan, Qianqian ^[3]; Pan, Quanjun ^[2]; Razavi, Seyed Armin ^[2]; Che, Xiaoyu ^[2]; Huang, Li ^[4]; Dai, Bingqian ^[2]; Wong, Kin ^[2]; Han, Xiufeng ^[4]; Wang, Kang L. ^[2]

Univ. of California, Los Angeles, CA (United States); OSTI
Univ. of California, Los Angeles, CA (United States)
Forschungszentrum Jülich (Germany)
Chinese Academy of Sciences (CAS), Beijing (China)

Spin-momentum locked surface states in topological insulators (TIs) provide a promising route for achieving high spin-orbit torque (SOT) efficiency beyond the bulk spin-orbit coupling in heavy metals (HMs). However, in previous works, there is a huge discrepancy among the quantitative SOTs from TIs in various systems determined by different methods. In this work, we systematically study the SOT in the TI(HM)/Ti/CoFeB/MgO systems by the same method, and make a conclusive assessment of SOT efficiency for TIs and HMs. Our results demonstrate that TIs show more than one order of magnitude higher SOT efficiency than HMs even at room temperature, at the same time the switching current density as low as 5.2 × 10⁵ A cm^–2 is achieved with (Bi_1–xSb_x)₂Te₃. Furthermore, we investigate the relationship between SOT efficiency and the position of Fermi level in (Bi_1–xSb_x)₂Te₃, where the SOT efficiency is significantly enhanced near the Dirac point, with the most insulating bulk and conducting surface states, indicating the dominating SOT contribution from topological surface states. This work unambiguously demonstrates the ultrahigh SOT efficiency from topological surface states.

View Accepted Manuscript (DOE)

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Spins and Heat in Nanoscale Electronic Systems (SHINES); Univ. of California, Riverside, CA (United States)

Sponsoring Organization:: Defense Advanced Research Projects Agency (DARPA); Function Accelerated nanoMaterial Engineering (FAME) Center; Microelectronics Advanced Research Corporation (MARCO); Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS); National Key Research and Development Program of China; National Natural Science Foundation of China (NSFC); National Science Foundation (NSF); US Army Research Office (ARO); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012670

OSTI ID:: 1767752

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 20 Vol. 123; ISSN 0031-9007; ISSN PRLTAO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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