From Highly Purified Boron Nitride to Boron Nitride-Based Heterostructures: An Inorganic Precursor-Based Strategy

Chen, Hao; Yang, Zhenzhen; Guo, Wei; Dunlap, John R.; Liang, Jiyuan; Sun, Yifan; Jie, Kecheng; Wang, Song; Fu, Jie; Dai, Sheng

doi:10.1002/adfm.201906284

Title: From Highly Purified Boron Nitride to Boron Nitride-Based Heterostructures: An Inorganic Precursor-Based Strategy

Journal Article · Fri Sep 27 00:00:00 EDT 2019 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.201906284· OSTI ID:1767507

Chen, Hao ^[1]; Yang, Zhenzhen ^[2]; Guo, Wei ^[3]; Dunlap, John R. ^[4]; Liang, Jiyuan ^[3]; Sun, Yifan ^[5]; Jie, Kecheng ^[3]; Wang, Song ^[6]; Fu, Jie ^[7];

^[2]

Zhejiang Univ., Hangzhou (China). Key Lab. of Biomass Chemical Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
Univ. of Tennessee, Knoxville, TN (United States)
Univ. of Tennessee, Knoxville, TN (United States). JIAM Microscopy Center
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Univ. of California, Riverside, CA (United States)
Zhejiang Univ., Hangzhou (China). Key Lab. of Biomass Chemical Engineering

The current approaches used to fabricate hexagonal boron nitrides (h-BN) from boron trioxide and urea always results in contamination of the h-BN product with carbon/oxygen. Thus, discovering a facile way of mass producing high-purity h-BN remains a challenge. A simple yet highly efficient thermal treatment approach to large-scale fabrication of nanoporous h-BN with high yield, high purity, and high crystallinity is described using NaNH2 and NaBH4 as the oxygen- and carbon-free precursors. The unique properties of inorganic metal salts, i.e., high melting point and strong electrostatic interaction with carbon substrates, render this strategy suitable for the production of homogeneous h-BN/mesoporous carbon and h-BN/carbon nanotube heterostructures of high crystallinity, high h-BN dispersity, and with a strong interfacial effect. These unique features make them promising candidates for supercapacitor applications, resulting a significantly enhanced specific capacitance. This study provides new insight into the fabrication of high-purity h-BN and h-BN-based heterostructures thus expanding their application in the field of energy storage and transformation.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Fluid Interface Reactions, Structures and Transport Center (FIRST); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC); Zhejiang Provincial Natural Science Foundation

Grant/Contract Number:: AC05-00OR22725; 21436007; 21706228; LR17B060002; AC05‐00OR22725

OSTI ID:: 1767507

Alternate ID(s):: OSTI ID: 1577908; OSTI ID: 1810024

Journal Information:: Advanced Functional Materials, Vol. 29, Issue 50; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 18 works

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Title: From Highly Purified Boron Nitride to Boron Nitride-Based Heterostructures: An Inorganic Precursor-Based Strategy

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