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X-ray characterization of anisotropic defect formation in SiC under irradiation with applied stress

Journal Article · · Scripta Materialia
In this study, high-energy x-ray diffraction is employed to gain insight into the irradiation-induced creep behavior of silicon carbide (SiC). Polycrystalline β-SiC specimens were simultaneously exposed to elevated temperature neutron-irradiation and mechanically applied stresses. The structural disordering was subsequently examined using two-dimensional x-ray diffraction. The intensity of the (111) shoulder peak, an indication of stacking disorder, increased when the specimens were irradiated under tensile stress. This is the first observation of nanoscale stress-induced stacking disorder in SiC at low neutron fluences. These findings suggest stress-induced preferential nucleation and/or growth of defect clusters as a key creep mechanism in neutron irradiated SiC.
Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Nuclear Energy (NE); USDOE Office of Science (SC), Fusion Energy Sciences (FES)
Grant/Contract Number:
AC05-00OR22725; SC0012704; SC0018322
OSTI ID:
1766393
Alternate ID(s):
OSTI ID: 1780087
OSTI ID: 1783465
OSTI ID: 23196481
Journal Information:
Scripta Materialia, Journal Name: Scripta Materialia Vol. 197; ISSN 1359-6462
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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