Manipulation of electronic property of epitaxial graphene on SiC substrate by Pb intercalation

Wang, Jinjin; Kim, Minsung; Chen, Liangyao; Ho, Kai-Ming; Tringides, Michael; Wang, Cai-Zhuang; Wang, Songyou

doi:10.1103/physrevb.103.085403

Title: Manipulation of electronic property of epitaxial graphene on SiC substrate by Pb intercalation

Journal Article · Tue Feb 02 00:00:00 EST 2021 · Physical Review B

DOI:https://doi.org/10.1103/physrevb.103.085403· OSTI ID:1764372

Wang, Jinjin ^[1]; Kim, Minsung ^[2]; Chen, Liangyao ^[3]; Ho, Kai-Ming ^[2]; Tringides, Michael ^[2]; Wang, Cai-Zhuang ^[2]; Wang, Songyou ^[1]

Fudan Univ., Shanghai (China); Ames Lab., Ames, IA (United States); Iowa State Univ., Ames, IA (United States)
Ames Lab., Ames, IA (United States); Iowa State Univ., Ames, IA (United States)
Fudan Univ., Shanghai (China)

Manipulating the electronic properties of graphene has been a subject of great interest since it can aid material design to extend the applications of graphene to many different areas. Here, we systematically investigate the effect of lead (Pb) intercalation on the structural and electronic properties of epitaxial graphene on the SiC(0001) substrate. We show that the band structure of Pb-intercalated few-layer graphene can be effectively tuned through changing intercalation conditions, such as coverage, location of Pb, and the initial number of graphene layers. Lead intercalation at the interface between the buffer layer (BL) and the SiC substrate decouples the BL from the substrate and transforms the BL into a p-doped graphene layer. We also show that Pb atoms tend to donate electrons to neighboring layers, leading to an n-doping graphene layer and a small gap in the Dirac cone under a sufficiently high Pb coverage. This paper provides useful guidance for manipulating the electronic properties of graphene layers on the SiC substrate.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Ames Lab., Ames, IA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Natural Science Foundation of China (NSFC)

Grant/Contract Number:: AC02-07CH11358; 11374055

OSTI ID:: 1764372

Report Number(s):: IS-J-10,407; TRN: US2206170

Journal Information:: Physical Review B, Vol. 103, Issue 8; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

References (40)

Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide de Heer, W. A.; Berger, C.; Ruan, M. Proceedings of the National Academy of Sciences, Vol. 108, Issue 41 https://doi.org/10.1073/pnas.1105113108	journal	September 2011
Generalized Gradient Approximation Made Simple Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868 https://doi.org/10.1103/PhysRevLett.77.3865	journal	October 1996
Formation of high-quality quasi-free-standing bilayer graphene on SiC(0001) by oxygen intercalation upon annealing in air Oliveira, Myriano H.; Schumann, Timo; Fromm, Felix Carbon, Vol. 52 https://doi.org/10.1016/j.carbon.2012.09.008	journal	February 2013
Pseudo Dirac dispersion in Mn-intercalated graphene on SiC Upadhyay Kahaly, M.; Kaloni, T. P.; Schwingenschlögl, U. Chemical Physics Letters, Vol. 578 https://doi.org/10.1016/j.cplett.2013.05.058	journal	July 2013
Structural and Electronic Properties of Pb- Intercalated Graphene on Ru(0001) Fei, Xiangmin; Zhang, Lizhi; Xiao, Wende The Journal of Physical Chemistry C, Vol. 119, Issue 18 https://doi.org/10.1021/acs.jpcc.5b00528	journal	March 2015
Lead (Pb) interfacing with epitaxial graphene Shtepliuk, Ivan; Vagin, Mikhail; Ivanov, Ivan G. Physical Chemistry Chemical Physics, Vol. 20, Issue 25 https://doi.org/10.1039/C8CP01814F	journal	January 2018
Projector augmented-wave method Blöchl, P. E. Physical Review B, Vol. 50, Issue 24, p. 17953-17979 https://doi.org/10.1103/PhysRevB.50.17953	journal	December 1994
High-quality, single-layered epitaxial graphene fabricated on 6H-SiC (0001) by flash annealing in Pb atmosphere and mechanism Hu, T. W.; Liu, X. T.; Ma, F. Nanotechnology, Vol. 26, Issue 10 https://doi.org/10.1088/0957-4484/26/10/105708	journal	February 2015
Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation Riedl, C.; Coletti, C.; Iwasaki, T. Physical Review Letters, Vol. 103, Issue 24 https://doi.org/10.1103/PhysRevLett.103.246804	journal	December 2009
Ytterbium Intercalation of Epitaxial Graphene Grown on Si-Face SiC Watcharinyanon, Somsakul; I. Johansson, Leif; Xia, Chao Graphene, Vol. 02, Issue 02 https://doi.org/10.4236/graphene.2013.22010	journal	January 2013
Spin–Orbit Coupling Induced Gap in Graphene on Pt(111) with Intercalated Pb Monolayer Klimovskikh, Ilya I.; Otrokov, Mikhail M.; Voroshnin, Vladimir Yu. ACS Nano, Vol. 11, Issue 1 https://doi.org/10.1021/acsnano.6b05982	journal	January 2017
Growth mechanism for epitaxial graphene on vicinal $6 H -SiC (0001)$ surfaces: A scanning tunneling microscopy study Hupalo, M.; Conrad, E. H.; Tringides, M. C. Physical Review B, Vol. 80, Issue 4 https://doi.org/10.1103/PhysRevB.80.041401	journal	July 2009
Atomic-Scale Morphology and Electronic Structure of Manganese Atomic Layers Underneath Epitaxial Graphene on SiC(0001) Gao, Teng; Gao, Yabo; Chang, Cuizu ACS Nano, Vol. 6, Issue 8 https://doi.org/10.1021/nn302303n	journal	July 2012
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
Epitaxial graphene on silicon carbide: Introduction to structured graphene Ruan, Ming; Hu, Yike; Guo, Zelei MRS Bulletin, Vol. 37, Issue 12 https://doi.org/10.1557/mrs.2012.231	journal	November 2012
Graphene: Status and Prospects Geim, A. K. Science, Vol. 324, Issue 5934, p. 1530-1534 https://doi.org/10.1126/science.1158877	journal	June 2009
Spatial variation of a giant spin–orbit effect induces electron confinement in graphene on Pb islands Calleja, Fabian; Ochoa, Héctor; Garnica, Manuela Nature Physics, Vol. 11, Issue 1 https://doi.org/10.1038/nphys3173	journal	December 2014
Engineering the electronic structure of epitaxial graphene by transfer doping and atomic intercalation Starke, U.; Forti, S.; Emtsev, K. V. MRS Bulletin, Vol. 37, Issue 12 https://doi.org/10.1557/mrs.2012.272	journal	November 2012
Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation Riedl, C.; Coletti, C.; Starke, U. Journal of Physics D: Applied Physics, Vol. 43, Issue 37 https://doi.org/10.1088/0022-3727/43/37/374009	journal	September 2010
Dirac Fermions in Strongly Bound Graphene Systems Li, Yuanchang; Chen, Pengcheng; Zhou, Gang Physical Review Letters, Vol. 109, Issue 20 https://doi.org/10.1103/PhysRevLett.109.206802	journal	November 2012
Formation of a quasi-free-standing graphene with a band gap at the dirac point by Pb atoms intercalation under graphene on Re(0001) Estyunin, D. A.; Klimovskikh, I. I.; Voroshnin, V. Yu. Journal of Experimental and Theoretical Physics, Vol. 125, Issue 5 https://doi.org/10.1134/S1063776117100065	journal	November 2017
100-GHz Transistors from Wafer-Scale Epitaxial Graphene Lin, Y.-M.; Dimitrakopoulos, C.; Jenkins, K. A. Science, Vol. 327, Issue 5966, p. 662-662 https://doi.org/10.1126/science.1184289	journal	February 2010
The rise of graphene Geim, A. K.; Novoselov, K. S. Nature Materials, Vol. 6, Issue 3, p. 183-191 https://doi.org/10.1038/nmat1849	journal	March 2007
The electronic properties of graphene Castro Neto, A. H.; Guinea, F.; Peres, N. M. R. Reviews of Modern Physics, Vol. 81, Issue 1, p. 109-162 https://doi.org/10.1103/RevModPhys.81.109	journal	January 2009
Theory of the Dirac half metal and quantum anomalous Hall effect in Mn-intercalated epitaxial graphene Li, Yuanchang; West, Damien; Huang, Huaqing Physical Review B, Vol. 92, Issue 20 https://doi.org/10.1103/PhysRevB.92.201403	journal	November 2015
Raman Spectrum of Graphene and Graphene Layers Ferrari, A. C.; Meyer, J. C.; Scardaci, V. Physical Review Letters, Vol. 97, Issue 18, Article No. 187401 https://doi.org/10.1103/PhysRevLett.97.187401	journal	October 2006
Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC Yurtsever, Ayhan; Onoda, Jo; Iimori, Takushi Small, Vol. 12, Issue 29 https://doi.org/10.1002/smll.201600666	journal	June 2016
Pb intercalation underneath a graphene layer on Ru(0001) and its effect on graphene oxidation Jin, Li; Fu, Qiang; Mu, Rentao Physical Chemistry Chemical Physics, Vol. 13, Issue 37 https://doi.org/10.1039/c1cp21843c	journal	January 2011
Electronic and structural properties of graphene-based metal-semiconducting heterostructures engineered by silicon intercalation Silly, M. G.; D’Angelo, M.; Besson, A. Carbon, Vol. 76 https://doi.org/10.1016/j.carbon.2014.04.033	journal	September 2014
Highly p-doped epitaxial graphene obtained by fluorine intercalation Walter, Andrew L.; Jeon, Ki-Joon; Bostwick, Aaron Applied Physics Letters, Vol. 98, Issue 18 https://doi.org/10.1063/1.3586256	journal	May 2011
Graphene growth on silicon carbide: A review: Graphene growth on silicon carbide Mishra, Neeraj; Boeckl, John; Motta, Nunzio physica status solidi (a), Vol. 213, Issue 9 https://doi.org/10.1002/pssa.201600091	journal	June 2016
Synthesis of Graphene and Its Applications: A Review Choi, Wonbong; Lahiri, Indranil; Seelaboyina, Raghunandan Critical Reviews in Solid State and Materials Sciences, Vol. 35, Issue 1 https://doi.org/10.1080/10408430903505036	journal	February 2010
Controlling of the Dirac band states of Pb-deposited graphene by using work function difference Tsujikawa, Y.; Sakamoto, M.; Yokoi, Y. AIP Advances, Vol. 10, Issue 8 https://doi.org/10.1063/5.0013797	journal	August 2020
Intercalated rare-earth metals under graphene on SiC Anderson, Nathaniel A.; Hupalo, Myron; Keavney, David Journal of Magnetism and Magnetic Materials, Vol. 474 https://doi.org/10.1016/j.jmmm.2018.11.007	journal	March 2019
A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu Grimme, Stefan; Antony, Jens; Ehrlich, Stephan The Journal of Chemical Physics, Vol. 132, Issue 15 https://doi.org/10.1063/1.3382344	journal	April 2010
Epitaxial graphene on $6 H -SiC$ and Li intercalation Virojanadara, C.; Watcharinyanon, S.; Zakharov, A. A. Physical Review B, Vol. 82, Issue 20 https://doi.org/10.1103/PhysRevB.82.205402	journal	November 2010
Manipulation of Dirac cones in intercalated epitaxial graphene Kim, Minsung; Tringides, Michael C.; Hershberger, Matthew T. Carbon, Vol. 123 https://doi.org/10.1016/j.carbon.2017.07.020	journal	October 2017
Two-dimensional gas of massless Dirac fermions in graphene Novoselov, K. S.; Geim, A. K.; Morozov, S. V. Nature, Vol. 438, Issue 7065, p. 197-200 https://doi.org/10.1038/nature04233	journal	November 2005
Perpendicular magnetic anisotropy of cobalt films intercalated under graphene Rougemaille, N.; N'Diaye, A. T.; Coraux, J. Applied Physics Letters, Vol. 101, Issue 14 https://doi.org/10.1063/1.4749818	journal	October 2012
Spin-induced band modifications of graphene through intercalation of magnetic iron atoms Sung, S. J.; Yang, J. W.; Lee, P. R. Nanoscale, Vol. 6, Issue 7 https://doi.org/10.1039/C3NR04178F	journal	January 2014

Similar Records

Structural consequences of hydrogen intercalation of epitaxial graphene on SiC(0001)

Journal Article · Mon Oct 20 00:00:00 EDT 2014 · Applied Physics Letters · OSTI ID:1764372

Johns, James E.; McBriarty, Martin E.; Hersam, Mark C.; +3 more

Electronic structures of an epitaxial graphene monolayer on SiC(0001) after metal intercalation (metal = Al, Ag, Au, Pt, and Pd): A first-principles study

Journal Article · Mon Feb 06 00:00:00 EST 2012 · Applied Physics Letters · OSTI ID:1764372

Hsu, Chia-Hsiu; Lin, Wen-Huan; Ozolins, Vidvuds; +1 more

Direct experimental evidence for the reversal of carrier type upon hydrogen intercalation in epitaxial graphene/SiC(0001)

Journal Article · Mon Jan 27 00:00:00 EST 2014 · Applied Physics Letters · OSTI ID:1764372

Li, Y. Y.; Li, L.

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY

Title: Manipulation of electronic property of epitaxial graphene on SiC substrate by Pb intercalation

Citation Formats

References (40)

Similar Records

Related Subjects