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Reversible ratchet effects in a narrow superconducting ring

Journal Article · · Physical Review. B
 [1];  [2];  [3];  [4];  [3];  [1]
  1. Zhejiang Univ., Hangzhou (China). Zhejiang Province Key Lab. of Quantum Technology and Devices; Nanjing Univ. (China). Collaborative Innovation Center of Advanced Microstructures
  2. Nanjing Univ. (China). Research Inst. of Superconductor Electronics
  3. Univ. of Antwerp (Belgium)
  4. Argonne National Lab. (ANL), Argonne, IL (United States); Northern Illinois Univ., DeKalb, IL (United States)

We study the ratchet effect in a narrow pinning-free superconductive ring based on time-dependent GinzburgLandau (TDGL) equations. Voltage responses to external dc and ac currents at various magnetic fields are studied. Due to asymmetric barriers for flux penetration and flux exit in the ring-shaped superconductor, the critical current above which the flux-flow state is reached, as well as the critical current for the transition to the normal state, are different for the two directions of applied current. Furthermore, these effects cooperatively cause ratchet signal reversal at high magnetic fields, which has not been reported to date in a pinning-free system. The ratchet signal found here is larger than those induced by asymmetric pinning potentials. Our results also demonstrate the feasibility of using mesoscopic superconductors to employ a superconducting diode effect in versatile superconducting devices.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES), Materials Sciences & Engineering Division; National Key Research and Development Program of China; National Natural Science Foundation of China (NNSFC); National Science Foundation (NSF)
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1763992
Journal Information:
Physical Review. B, Journal Name: Physical Review. B Journal Issue: 1 Vol. 103; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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