Limitations in Impact Ionization Modeling for Predicting Breakdown in Wide Bandgap Power Semiconductors.
Conference
·
OSTI ID:1763872
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1763872
- Report Number(s):
- SAND2020-1043C; 683284
- Country of Publication:
- United States
- Language:
- English
Similar Records
Limitations in Impact Ionization Modeling for Predicting Breakdown in Wide Bandgap Power Semiconductors.
Wide-Bandgap Semiconductors for Power Electronics.
Ultra-Wide-Bandgap Semiconductors for Power Electronics.
Conference
·
Mon Jun 01 00:00:00 EDT 2020
·
OSTI ID:1798067
Wide-Bandgap Semiconductors for Power Electronics.
Conference
·
Mon Apr 01 00:00:00 EDT 2013
·
OSTI ID:1661383
Ultra-Wide-Bandgap Semiconductors for Power Electronics.
Conference
·
Thu Oct 01 00:00:00 EDT 2015
·
OSTI ID:1337978