Conversion reactions in atomic layer processing with emphasis on ZnO conversion to Al 2 O 3 by trimethylaluminum

Myers, Tyler J.; Cano, Austin M.; Lancaster, Diane K.; Clancey, Joel W.; George, Steven M.

doi:10.1116/6.0000680

Conversion reactions in atomic layer processing with emphasis on ZnO conversion to Al ₂ O ₃ by trimethylaluminum

Journal Article · Mon Mar 01 00:00:00 EST 2021 · Journal of Vacuum Science and Technology A

DOI:https://doi.org/10.1116/6.0000680· OSTI ID:1763832

Myers, Tyler J. ^[1]; Cano, Austin M. ^[1]; Lancaster, Diane K. ^[1]; Clancey, Joel W. ^[1]; ^[1]

Department of Chemistry, University of Colorado, Boulder, Colorado 80309

Not Available

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

OSTI ID:: 1763832

Journal Information:: Journal of Vacuum Science and Technology A, Journal Name: Journal of Vacuum Science and Technology A Journal Issue: 2 Vol. 39; ISSN 0734-2101

Publisher:: American Vacuum SocietyCopyright Statement

Country of Publication:: United States

Language:: English

References (65)

Structural and Electrical Properties of Atomic Layer Deposited Al-Doped ZnO Films Lee, Do-Joong; Kim, Hyun-Mi; Kwon, Jang-Yeon Advanced Functional Materials, Vol. 21, Issue 3 https://doi.org/10.1002/adfm.201001342	journal	November 2010
Infrared reflectivity of zinc oxide Collins, R. J.; Kleinman, D. A. Journal of Physics and Chemistry of Solids, Vol. 11, Issue 3-4 https://doi.org/10.1016/0022-3697(59)90213-6	journal	October 1959
ZnO/Al2O3 nanolaminates fabricated by atomic layer deposition: growth and surface roughness measurements Elam, J. W.; Sechrist, Z. A.; George, S. M. Thin Solid Films, Vol. 414, Issue 1 https://doi.org/10.1016/S0040-6090(02)00427-3	journal	July 2002
Al3O3 thin film growth on Si(100) using binary reaction sequence chemistry Ott, A. W.; Klaus, J. W.; Johnson, J. M. Thin Solid Films, Vol. 292, Issue 1-2 https://doi.org/10.1016/S0040-6090(96)08934-1	journal	January 1997
Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications Hinkle, C. L.; Vogel, E. M.; Ye, P. D. Current Opinion in Solid State and Materials Science, Vol. 15, Issue 5 https://doi.org/10.1016/j.cossms.2011.04.005	journal	October 2011
Ceramic nanomaterials from aqueous and 1,2-ethanediol supersaturated solutions at high temperature Moroni, Michelangelo; Borrini, Daniele; Calamai, Luca Journal of Colloid and Interface Science, Vol. 286, Issue 2 https://doi.org/10.1016/j.jcis.2005.01.097	journal	June 2005
Transition alumina phases induced by heat treatment of boehmite: An X-ray diffraction and infrared spectroscopy study Boumaza, A.; Favaro, L.; Lédion, J. Journal of Solid State Chemistry, Vol. 182, Issue 5 https://doi.org/10.1016/j.jssc.2009.02.006	journal	May 2009
Synthesis of colloidal zinc oxide nanoparticles by pulsed laser ablation in aqueous media Singh, S. C.; Gopal, R. Physica E: Low-dimensional Systems and Nanostructures, Vol. 40, Issue 4 https://doi.org/10.1016/j.physe.2007.08.155	journal	February 2008
Surface reactions of TiCl4 and Al(CH3)3 on GaAs(100) during the first half-cycle of atomic layer deposition Granados-Alpizar, Bernal; Muscat, Anthony J. Surface Science, Vol. 605, Issue 13-14 https://doi.org/10.1016/j.susc.2011.04.009	journal	July 2011
Mechanisms of Thermal Atomic Layer Etching George, Steven M. Accounts of Chemical Research, Vol. 53, Issue 6 https://doi.org/10.1021/acs.accounts.0c00084	journal	June 2020
Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of Al ₂ O ₃ Using Sequential, Self-Limiting Thermal Reactions Lee, Younghee; DuMont, Jaime W.; George, Steven M. Chemistry of Materials, Vol. 28, Issue 9 https://doi.org/10.1021/acs.chemmater.6b00111	journal	April 2016
Selectivity in Thermal Atomic Layer Etching Using Sequential, Self-Limiting Fluorination and Ligand-Exchange Reactions Lee, Younghee; Huffman, Craig; George, Steven M. Chemistry of Materials, Vol. 28, Issue 21 https://doi.org/10.1021/acs.chemmater.6b02543	journal	October 2016
Thermal Atomic Layer Etching of ZnO by a “Conversion-Etch” Mechanism Using Sequential Exposures of Hydrogen Fluoride and Trimethylaluminum Zywotko, David R.; George, Steven M. Chemistry of Materials, Vol. 29, Issue 3 https://doi.org/10.1021/acs.chemmater.6b04529	journal	January 2017
Thermal Atomic Layer Etching of Silicon Using O ₂ , HF, and Al(CH ₃ ) ₃ as the Reactants Abdulagatov, Aziz I.; George, Steven M. Chemistry of Materials, Vol. 30, Issue 23 https://doi.org/10.1021/acs.chemmater.8b02745	journal	November 2018
Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review Mackus, Adriaan J. M.; Schneider, Joel R.; MacIsaac, Callisto Chemistry of Materials, Vol. 31, Issue 4 https://doi.org/10.1021/acs.chemmater.8b02878	journal	December 2018
Atomic Layer Deposition of Zn(O,S) Alloys Using Diethylzinc with H ₂ O and H ₂ S: Effect of Exchange Reactions Lancaster, Diane K.; Sun, Huaxing; George, Steven M. The Journal of Physical Chemistry C, Vol. 121, Issue 34 https://doi.org/10.1021/acs.jpcc.7b05361	journal	August 2017
Volatile Etch Species Produced during Thermal Al ₂ O ₃ Atomic Layer Etching Clancey, Joel W.; Cavanagh, Andrew S.; Smith, James E. T. The Journal of Physical Chemistry C, Vol. 124, Issue 1 https://doi.org/10.1021/acs.jpcc.9b06104	journal	November 2019
Thermal Atomic Layer Etching of SiO ₂ by a “Conversion-Etch” Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride DuMont, Jaime W.; Marquardt, Amy E.; Cano, Austin M. ACS Applied Materials & Interfaces, Vol. 9, Issue 11 https://doi.org/10.1021/acsami.7b01259	journal	March 2017
WO ₃ and W Thermal Atomic Layer Etching Using “Conversion-Fluorination” and “Oxidation-Conversion-Fluorination” Mechanisms Johnson, Nicholas R.; George, Steven M. ACS Applied Materials & Interfaces, Vol. 9, Issue 39 https://doi.org/10.1021/acsami.7b09161	journal	April 2017
Prospects for Thermal Atomic Layer Etching Using Sequential, Self-Limiting Fluorination and Ligand-Exchange Reactions George, Steven M.; Lee, Younghee ACS Nano, Vol. 10, Issue 5 https://doi.org/10.1021/acsnano.6b02991	journal	May 2016
X-ray Reflectivity Characterization of ZnO/Al ₂ O ₃ Multilayers Prepared by Atomic Layer Deposition Jensen, J. M.; Oelkers, A. B.; Toivola, R. Chemistry of Materials, Vol. 14, Issue 5 https://doi.org/10.1021/cm011587z	journal	May 2002
Growth of ZnO/Al₂O₃ Alloy Films Using Atomic Layer Deposition Techniques Elam, J. W.; George, S. M. Chemistry of Materials, Vol. 15, Issue 4 https://doi.org/10.1021/cm020607+	journal	February 2003
Atomic Layer Deposition of Al ₂ O ₃ Films on Polyethylene Particles Ferguson, J. D.; Weimer, A. W.; George, S. M. Chemistry of Materials, Vol. 16, Issue 26 https://doi.org/10.1021/cm040008y	journal	December 2004
Atomic Layer Deposition of Al-doped ZnO Films: Effect of Grain Orientation on Conductivity Dasgupta, Neil P.; Neubert, Sebastian; Lee, Wonyoung Chemistry of Materials, Vol. 22, Issue 16 https://doi.org/10.1021/cm101227h	journal	August 2010
Ion Exchange in Ultrathin Films of Cu ₂ S and ZnS under Atomic Layer Deposition Conditions Thimsen, Elijah; Peng, Qing; Martinson, Alex B. F. Chemistry of Materials, Vol. 23, Issue 20 https://doi.org/10.1021/cm201412p	journal	October 2011
Mechanisms for Substrate-Enhanced Growth during the Early Stages of Atomic Layer Deposition of Alumina onto Silicon Nitride Surfaces Lamagna, Luca; Wiemer, Claudia; Perego, Michele Chemistry of Materials, Vol. 24, Issue 6 https://doi.org/10.1021/cm203362d	journal	March 2012
Decomposition of Metal Alkylamides, Alkyls, and Halides at Reducible Oxide Surfaces: Mechanism of ‘Clean-up’ During Atomic Layer Deposition of Dielectrics onto III–V Substrates Klejna, Sylwia; Elliott, Simon D. Chemistry of Materials, Vol. 26, Issue 7 https://doi.org/10.1021/cm403336c	journal	March 2014
Role of Gas Doping Sequence in Surface Reactions and Dopant Incorporation during Atomic Layer Deposition of Al-Doped ZnO Na, Jeong-Seok; Peng, Qing; Scarel, Giovanna Chemistry of Materials, Vol. 21, Issue 23 https://doi.org/10.1021/cm901404p	journal	November 2009
Atomic Layer Deposition: An Overview George, Steven M. Chemical Reviews, Vol. 110, Issue 1, p. 111-131 https://doi.org/10.1021/cr900056b	journal	January 2010
Influence of Al Doping on the Properties of ZnO Thin Films Grown by Atomic Layer Deposition Geng, Yang; Guo, Li; Xu, Sai-Sheng The Journal of Physical Chemistry C, Vol. 115, Issue 25 https://doi.org/10.1021/jp2023567	journal	June 2011
Study of Growth Mechanism and Properties of Zinc Indium Sulfide Thin Films Deposited by Atomic Layer Chemical Vapor Deposition over the Entire Range of Composition Genevée, Pascal; Donsanti, Frédérique; Renou, Gilles The Journal of Physical Chemistry C, Vol. 115, Issue 34 https://doi.org/10.1021/jp203604j	journal	August 2011
First-Principles Modeling of the “Clean-Up” of Native Oxides during Atomic Layer Deposition onto III–V Substrates Klejna, Sylwia; Elliott, Simon D. The Journal of Physical Chemistry C, Vol. 116, Issue 1 https://doi.org/10.1021/jp206566y	journal	December 2011
Tuning Optical Properties of Al ₂ O ₃ /ZnO Nanolaminates Synthesized by Atomic Layer Deposition Chaaya, Adib Abou; Viter, Roman; Baleviciute, Ieva The Journal of Physical Chemistry C, Vol. 118, Issue 7 https://doi.org/10.1021/jp411970w	journal	February 2014
Pyrolysis of Alucone Molecular Layer Deposition Films Studied Using In Situ Transmission Fourier Transform Infrared Spectroscopy DuMont, Jaime W.; George, Steven M. The Journal of Physical Chemistry C, Vol. 119, Issue 26 https://doi.org/10.1021/jp512074n	journal	March 2015
Al ₂ O ₃ Atomic Layer Deposition with Trimethylaluminum and Ozone Studied by in Situ Transmission FTIR Spectroscopy and Quadrupole Mass Spectrometry Goldstein, David N.; McCormick, Jarod A.; George, Steven M. The Journal of Physical Chemistry C, Vol. 112, Issue 49 https://doi.org/10.1021/jp804296a	journal	November 2008
Atomic Layer Etching of Al₂O₃ Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)₂ and Hydrogen Fluoride Lee, Younghee; George, Steven M. ACS Nano, Vol. 9, Issue 2 https://doi.org/10.1021/nn507277f	journal	January 2015
Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide Timm, Rainer; Head, Ashley R.; Yngman, Sofie Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-03855-z	journal	April 2018
Facile synthesis of highly thermostable mesoporous ZnAl₂O₄with adjustable pore size Ge, Dong-Lai; Fan, Ying-Ju; Qi, Chang-Lin J. Mater. Chem. A, Vol. 1, Issue 5 https://doi.org/10.1039/C2TA00903J	journal	January 2013
Comparative study on in situ surface cleaning effect of intrinsic oxide-covering GaAs surface using TMA precursor and Al₂O₃ buffer layer for HfGdO gate dielectrics Gao, Juan; He, Gang; Liang, Shuang Journal of Materials Chemistry C, Vol. 6, Issue 10 https://doi.org/10.1039/C8TC00070K	journal	January 2018
Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition Elam, J. W.; Groner, M. D.; George, S. M. Review of Scientific Instruments, Vol. 73, Issue 8, p. 2981-2987 https://doi.org/10.1063/1.1490410	journal	August 2002
General Relationship for the Thermal Oxidation of Silicon Deal, B. E.; Grove, A. S. Journal of Applied Physics, Vol. 36, Issue 12 https://doi.org/10.1063/1.1713945	journal	December 1965
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process Puurunen, Riikka L. Journal of Applied Physics, Vol. 97, Issue 12, Article No. 121301 https://doi.org/10.1063/1.1940727	journal	June 2005
Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3 Huang, M. L.; Chang, Y. C.; Chang, C. H. Applied Physics Letters, Vol. 87, Issue 25 https://doi.org/10.1063/1.2146060	journal	December 2005
Zn(O,S) buffer layers by atomic layer deposition in Cu(In,Ga)Se2 based thin film solar cells: Band alignment and sulfur gradient Platzer-Björkman, C.; Törndahl, T.; Abou-Ras, D. Journal of Applied Physics, Vol. 100, Issue 4 https://doi.org/10.1063/1.2222067	journal	August 2006
Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As Chang, C. -H.; Chiou, Y. -K.; Chang, Y. -C. Applied Physics Letters, Vol. 89, Issue 24 https://doi.org/10.1063/1.2405387	journal	December 2006
Spatially controlled atomic layer deposition in porous materials Elam, J. W.; Libera, J. A.; Pellin, M. J. Applied Physics Letters, Vol. 91, Issue 24 https://doi.org/10.1063/1.2822897	journal	December 2007
GaAs interfacial self-cleaning by atomic layer deposition Hinkle, C. L.; Sonnet, A. M.; Vogel, E. M. Applied Physics Letters, Vol. 92, Issue 7 https://doi.org/10.1063/1.2883956	journal	February 2008
Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters Chang, Y. C.; Huang, M. L.; Lee, K. Y. Applied Physics Letters, Vol. 92, Issue 7 https://doi.org/10.1063/1.2883967	journal	February 2008
Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces Milojevic, M.; Hinkle, C. L.; Aguirre-Tostado, F. S. Applied Physics Letters, Vol. 93, Issue 25 https://doi.org/10.1063/1.3054348	journal	December 2008
Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates Suri, Rahul; Lichtenwalner, Daniel J.; Misra, Veena Applied Physics Letters, Vol. 96, Issue 11 https://doi.org/10.1063/1.3357422	journal	March 2010
An in situ examination of atomic layer deposited alumina/InAs(100) interfaces Kirk, A. P.; Milojevic, M.; Kim, J. Applied Physics Letters, Vol. 96, Issue 20 https://doi.org/10.1063/1.3432749	journal	May 2010
Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films Banerjee, Parag; Lee, Won-Jae; Bae, Ki-Ryeol Journal of Applied Physics, Vol. 108, Issue 4 https://doi.org/10.1063/1.3466987	journal	August 2010
Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2 Timm, R.; Fian, A.; Hjort, M. Applied Physics Letters, Vol. 97, Issue 13 https://doi.org/10.1063/1.3495776	journal	September 2010
Surface chemistry and Fermi level movement during the self-cleaning of GaAs by trimethyl-aluminum Tallarida, M.; Adelmann, C.; Delabie, A. Applied Physics Letters, Vol. 99, Issue 4 https://doi.org/10.1063/1.3615784	journal	July 2011
Transparent conducting oxide semiconductors for transparent electrodes Minami, Tadatsugu Semiconductor Science and Technology, Vol. 20, Issue 4 https://doi.org/10.1088/0268-1242/20/4/004	journal	March 2005
Atomic layer deposition of ZnO: a review Tynell, Tommi; Karppinen, Maarit Semiconductor Science and Technology, Vol. 29, Issue 4 https://doi.org/10.1088/0268-1242/29/4/043001	journal	February 2014
Surface chemistry and infrared absorbance changes during ZnO atomic layer deposition on ZrO2 and BaTiO3 particles Ferguson, J. D.; Weimer, A. W.; George, S. M. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 23, Issue 1 https://doi.org/10.1116/1.1821585	journal	January 2005
Rotary reactor for atomic layer deposition on large quantities of nanoparticles McCormick, J. A.; Cloutier, B. L.; Weimer, A. W. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 25, Issue 1 https://doi.org/10.1116/1.2393299	journal	January 2007
Growth characteristics, material properties, and optical properties of zinc oxysulfide films deposited by atomic layer deposition Bakke, Jonathan R.; Tanskanen, Jukka T.; Hägglund, Carl Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 30, Issue 1 https://doi.org/10.1116/1.3664758	journal	January 2012
Atomic layer deposition of zinc indium sulfide films: Mechanistic studies and evidence of surface exchange reactions and diffusion processes Genevée, Pascal; Donsanti, Frédérique; Schneider, Nathanaelle Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 31, Issue 1 https://doi.org/10.1116/1.4768919	journal	January 2013
Thermal atomic layer etching of silicon nitride using an oxidation and “conversion etch” mechanism Abdulagatov, Aziz I.; George, Steven M. Journal of Vacuum Science & Technology A, Vol. 38, Issue 2 https://doi.org/10.1116/1.5140481	journal	March 2020
Dry Etching of ZnO Using an Inductively Coupled Plasma Lee, Ji-Myon; Chang, Ki-Myung; Kim, Kyoung-Kook Journal of The Electrochemical Society, Vol. 148, Issue 1 https://doi.org/10.1149/1.1344554	journal	January 2001
Properties of ZnO/Al[sub 2]O[sub 3] Alloy Films Grown Using Atomic Layer Deposition Techniques Elam, J. W.; Routkevitch, D.; George, S. M. Journal of The Electrochemical Society, Vol. 150, Issue 6 https://doi.org/10.1149/1.1569481	journal	January 2003
Effects of Surface Treatments on Interfacial Self-Cleaning in Atomic Layer Deposition of Al[sub 2]O[sub 3] on InSb Hou, C. H.; Chen, M. C.; Chang, C. H. Journal of The Electrochemical Society, Vol. 155, Issue 9 https://doi.org/10.1149/1.2948386	journal	January 2008
Structural Characterisation of ZnO Particles Obtained by the Emulsion Precipitation Method Kołodziejczak-Radzimska, Agnieszka; Markiewicz, Ewa; Jesionowski, Teofil Journal of Nanomaterials, Vol. 2012 https://doi.org/10.1155/2012/656353	journal	January 2012

Similar Records

Nonpyrophoric alternative to trimethylaluminum for the atomic layer deposition of Al₂O₃

Journal Article · Tue Feb 04 19:00:00 EST 2025 · Journal of Vacuum Science and Technology A · OSTI ID:2506728

Reaction sintering of ZnO-Al{sub 2}O{sub 3}

Journal Article · Thu Nov 30 23:00:00 EST 1995 · Journal of the American Ceramic Society · OSTI ID:177975

Reaction sintering of ZnO-Al sub 2 O sub 3

Technical Report · Wed May 01 00:00:00 EDT 1991 · OSTI ID:5412106

Conversion reactions in atomic layer processing with emphasis on ZnO conversion to Al 2 O 3 by trimethylaluminum

Citation Formats

References (65)

Similar Records

Related Subjects

Conversion reactions in atomic layer processing with emphasis on ZnO conversion to Al ₂ O ₃ by trimethylaluminum