Phase Transition in a Memristive Suspended MoS2 Monolayer Probed by Opto- and Electro-Mechanics

Chaste, Julien; Hnid, Imen; Khalil, Lama; Si, Chen; Durnez, Alan; Lafosse, Xavier; Zhao, Meng-Qiang; Johnson, A. T. Charlie; Zhang, Shengbai; Bang, Junhyeok; Ouerghi, Abdelkarim

doi:10.1021/acsnano.0c05721

Title: Phase Transition in a Memristive Suspended MoS₂ Monolayer Probed by Opto- and Electro-Mechanics

Journal Article · Thu Oct 15 00:00:00 EDT 2020 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.0c05721· OSTI ID:1762289

^[1];

^[1]; Khalil, Lama ^[1];

^[2]; Durnez, Alan ^[1]; Lafosse, Xavier ^[1];

^[3];

^[3]; Zhang, Shengbai ^[4]; Bang, Junhyeok ^[5]; Ouerghi, Abdelkarim ^[1]

Univ. Paris-Saclay, Palaiseau (France)
Beihang Univ., Beijing (China)
Univ. of Pennsylvania, Philadelphia, PA (United States)
Rensselaer Polytechnic Inst., Troy, NY (United States)
Chungbuk National Univ., Cheongju (Korea)

Semiconducting monolayers of a 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H–1T' phase transition in a suspended 2D monolayer membrane of MoS₂. Electronic transport shows unexpected memristive properties in the MoS₂ membrane, in the absence of any external dopants. A strong mechanical softening of the membrane is measured concurrently and may only be related to the 2H–1T' phase transition, which imposes a 3% directional elongation of the topological 1T' phase with respect to the semiconducting 2H. We note that only a few percent 2H–1T' phase switching is sufficient to observe measurable memristive effects. Our experimental results combined with first-principles total energy calculations indicate that sulfur vacancy diffusion plays a key role in the initial nucleation of the phase transition. Our study clearly shows that nanomechanics represents an ultrasensitive technique to probe the crystal phase transition in 2D materials or thin membranes. Lastly, a better control of the microscopic mechanisms responsible for the observed memristive effect in MoS₂ is important for the implementation of future devices.

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Research Organization:: Rensselaer Polytechnic Inst., Troy, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0002623

OSTI ID:: 1762289

Journal Information:: ACS Nano, Vol. 14, Issue 10; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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