Epitaxial stabilization of ultra thin films of high entropy perovskite

Patel, Ranjan Kumar; Ojha, Shashank Kumar; Kumar, Siddharth; Saha, Akash; Mandal, Prithwijit; Freeland, J. W.; Middey, S.

doi:10.1063/1.5133710

Epitaxial stabilization of ultra thin films of high entropy perovskite

Journal Article · Tue Feb 18 00:00:00 EST 2020 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5133710· OSTI ID:1761513

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Indian Inst. of Science, Bengaluru (India)
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

High entropy oxides (HEOs) are a class of materials, containing equimolar portions of five or more transition metal and/or rare-earth elements. We report here about the layer-by-layer growth of HEO [(La_0.2Pr_0.2Nd_0.2Sm_0.2Eu_0.2)NiO₃] thin films on NdGaO₃ substrates by pulsed laser deposition. The combined characterizations with in situ reflection high energy electron diffraction, atomic force microscopy, and x-ray diffraction affirm the single crystalline nature of the film with smooth surface morphology. The desired +3 oxidation of Ni has been confirmed by an element sensitive x-ray absorption spectroscopy measurement. Temperature dependent electrical transport measurements revealed a first order metal-insulator transition with the transition temperature very similar to the undoped NdNiO₃. Furthermore, since both these systems have a comparable tolerance factor, this work demonstrates that the electronic behaviors of A-site disordered perovskite-HEOs are primarily controlled by the average tolerance factor.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: Government of India, Department of Science and Technology; USDOE; USDOE Office of Science (SC), Office of Basic Energy Sciences (BES). Scientific User Facilities Division

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1761513

Alternate ID(s):: OSTI ID: 1600046

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 116; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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