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U.S. Department of Energy
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Continuous sintering of self-reinforced silicon nitride containing reduced amounts of sintering aids

Conference ·
OSTI ID:175575
; ;  [1]
  1. Southern Illinois Univ., Carbondale, IL (United States); and others
Seeding of Si{sub 3} N{sub 4} to promote the in-situ formation of elongated {beta}-Si{sub 3}N{sub 4}during sintering was investigated for continuously sintered Si{sub 3}N{sub 4} compositions. Si{sub 3}N{sub 4} formulations containing 2 or 4 wt% A1{sub 2}O{sub 3} and 6 or 8 wt% Y{sub 2}O{sub 3}, with and without the addition of 5 wt% {beta}-Si{sub 3}N{sub 4} seed, were continuously sintered for 30 to 90 min in 1 atm of flowing N{sub 2}, over the temperature range of 1700 to 1750{degrees}C. Room temperature four-point flexural strength was slightly lower and fracture toughness was only marginally improved by the addition of {beta}-Si{sub 3}N{sub 4} seed. XRD and microstructural results indicated that the addition of {beta}-Si{sub 3}N{sub 4} seed does promote the in-situ formation of {beta}-Si{sub 3}N{sub 4} at lower sintering times and temperatures.
DOE Contract Number:
AC05-84OR21400
OSTI ID:
175575
Report Number(s):
CONF-9501103--
Country of Publication:
United States
Language:
English

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