An InGaAsSb/GaSb photovoltaic cell by liquid-phase epitaxy for thermophotovoltaic (TPV) application
- AstroPower, Inc., Solar Park, Newark, Delaware 19716-2000 (United States)
Results of a preliminary study of the liquid-phase epitaxy of the InGaAsSb/GaSb quaternary system for use in 0.55 eV thermophotovoltaic cells are presented. While this work is currently in a preliminary stage, the background and overall experience database available indicate strongly that the 0.55 eV InGaAsSb/GaSb photovoltaic cell by liquid phase epitaxy is a practical and attractive development project for thermophotovoltaic applications. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 174455
- Report Number(s):
- CONF-940101--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 321; ISSN 0094-243X; ISSN APCPCS
- Country of Publication:
- United States
- Language:
- English
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