Direct Observations of Defect Structures in Optoelectronic Materials by Z-Contrast STEM

Conference · Mon Aug 31 00:00:00 EDT 1998

OSTI ID:1740

Beaumont, B ^[1]; Browning, N D; Chen, Y P; Faurie, J -P; Gibart, P; Nellist, P D; Omnes, F; Pennycook, S J; Rujirawat, S; Sivanantham, S; Xin, Y

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1. ORNL

Optoelectronic semiconductor materials have wide and important technological applications. For example, wide gap nitride semiconductors have attracted significant attention recently due to their promising performance as short-wavelength light emitting diodes (LEDs) and blue lasers, while HgCdTe II-VI semiconductors are the most promising candidates for applications as infrared detectors, or large array x-ray or r-ray detectors. In this paper, two examples are given to show that high-resolution Z-contrast imaging is an effective technique to determine the atomic structures of defects in these complex semiconductor materials.

• Research Organization: Oak Ridge National Laboratory; Oak Ridge, TN
• Sponsoring Organization: USDOE Office of Energy Research (ER)
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 1740
• Report Number(s): ORNL/CP-100161; KC 02 02 04 0; ON: DE00001740
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Crystal Defects
Microstructure
Scanning Electron Microscopy
Transmission Electron Microscopy