Spontaneous Valley Polarization of Interacting Carriers in a Monolayer Semiconductor

Li, Jing; Goryca, Mateusz Marek; Wilson, Nathan  P.; Stier, Andreas  V.; Xu, Xiaodong; Crooker, Scott  A.

doi:10.1103/physrevlett.125.147602

Title: Spontaneous Valley Polarization of Interacting Carriers in a Monolayer Semiconductor

Journal Article · Fri Oct 02 00:00:00 EDT 2020 · Physical Review Letters

DOI:https://doi.org/10.1103/physrevlett.125.147602· OSTI ID:1735918

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Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Univ. of Washington, Seattle, WA (United States)

Here, we report magnetoabsorption spectroscopy of gated ${WSe}_{2}$ monolayers in high magnetic fields up to 60 T. When doped with a 2D Fermi sea of mobile holes, well-resolved sequences of optical transitions are observed in both $σ^{\pm}$ circular polarizations, which unambiguously and separately indicate the number of filled Landau levels (LLs) in both $K$ and $K^{'}$ valleys. This reveals the interaction-enhanced valley Zeeman energy, which is found to be highly tunable with hole density $p$ . We exploit this tunability to align the LLs in $K$ and $K^{'}$ , and find that the 2D hole gas becomes unstable against small changes in LL filling and can spontaneously valley polarize. These results cannot be understood within a single-particle picture, highlighting the importance of exchange interactions in determining the ground state of 2D carriers in monolayer semiconductors.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF)

Grant/Contract Number:: 89233218CNA000001; SC0018171; DMR-1644779

OSTI ID:: 1735918

Report Number(s):: LA-UR-20-25746; TRN: US2205271

Journal Information:: Physical Review Letters, Vol. 125, Issue 14; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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