Strain dependence of Auger recombination in 3 μm GaInAsSb/GaSb type-I active regions

Underwood, Kenneth J.; Briggs, Andrew F.; Sifferman, Scott D.; Verma, Varun B.; Sirica, Nicholas Steven; Prasankumar, Rohit Prativadi; Nam, Sae Woo; Silverman, Kevin L.; Bank, Seth R.; Gopinath, Juliet T.

doi:10.1063/5.0007512

Strain dependence of Auger recombination in 3 μm GaInAsSb/GaSb type-I active regions

Journal Article · Mon Jun 29 00:00:00 EDT 2020 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0007512· OSTI ID:1726199

^[1]; ^[2]; ^[2]; Verma, Varun B. ^[3]; ^[4]; ^[4]; Nam, Sae Woo ^[3]; Silverman, Kevin L. ^[3]; ^[2]; ^[1]

Univ. of Colorado, Boulder, CO (United States)
Univ. of Texas, Austin, TX (United States)
National Inst. of Standards and Technology (NIST), Boulder, CO (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)

We differentiate the effect of strain induced by lattice-mismatched growth from strain induced by mechanical deformation on cubic nonradiative Auger recombination in narrow-gap GaInAsSb/GaSb quantum well (QW) heterostructures. The typical reduction in the Auger coefficient observed with lattice-mismatched growth appears to be due to the concomitant compositional change rather than the addition of strain, with implications for mid-IR semiconductor laser design. We induced a range of internal compressive strain in five samples from -0.90% to -2.07% by varying the composition during the growth and mechanically induced a similar range of internal strain in analogous quantum well membrane samples. We performed time-resolved photoluminescence and differential reflectivity measurements to extract the carrier recombination dynamics, taken at 300 K with carrier densities from $2.7 \times 10^{18}$ cm^-3 to $1.4 \times 10^{19}$ cm^-3. We observed no change with strain in the cubic Auger coefficient of samples that were strained mechanically, but we did observe a trend with strain in samples that were strained by the QW alloy composition. Measured Auger coefficients ranged from $3.0 \times 1 0^{- 29}$ cm⁶ s^-1 to $3.0 \times 1 0^{- 28}$ cm⁶ s^-1.

View Accepted Manuscript (DOE)

Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC). Basic Energy Sciences (BES); National Science Foundation (NSF); Center for Integrated Nanotechnologies (CINT); Defense Advanced Research Projects Agency (DARPA); US Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: 89233218CNA000001

OSTI ID:: 1726199

Report Number(s):: LA-UR--20-23245

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 116; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
Recombination reactions
atomic and molecular spectra
electronic transport
heterostructures
quantum wells
semiconductor lasers
time-resolved photoluminescence

Strain dependence of Auger recombination in 3 μm GaInAsSb/GaSb type-I active regions

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