Spin-Dependent Photovoltaic and Photogalvanic Responses of Optoelectronic Devices Based on Chiral Two-Dimensional Hybrid Organic–Inorganic Perovskites

Wang, Jingying; Lu, Haipeng; Pan, Xin; Xu, Junwei; Liu, Haoliang; Liu, Xiaojie; Khanal, Dipak R.; Toney, Michael F.; Beard, Matthew C.; Vardeny, Z. Valy

doi:10.1021/acsnano.0c05980

Title: Spin-Dependent Photovoltaic and Photogalvanic Responses of Optoelectronic Devices Based on Chiral Two-Dimensional Hybrid Organic–Inorganic Perovskites

Journal Article · Thu Nov 26 00:00:00 EST 2020 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.0c05980· OSTI ID:1724294

Wang, Jingying ^[1];

^[2]; Pan, Xin ^[1]; Xu, Junwei ^[3]; Liu, Haoliang ^[1]; Liu, Xiaojie ^[1]; Khanal, Dipak R. ^[1];

^[3];

^[2];

^[1]

Department of Physics & Astronomy, University of Utah, Salt Lake City, Utah 84112, United States
Chemistry & Nanoscience Center, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States

Two-dimensional hybrid organic–inorganic perovskites (2D-HOIPs) that form natural multiple quantum wells have attracted increased research interest due to their interesting physics and potential applications in optoelectronic devices. Recent studies have shown that spintronics applications can also be introduced to 2D-HOIPs upon integrating chiral organic ligands into the organic layers. Here we report spin-dependent photovoltaic and photogalvanic responses of optoelectronic devices based on chiral 2D-HOIPs, namely, (R-MBA)₂PbI₄ and (S-MBA)₂PbI₄. The out-of-plane photocurrent response in vertical photovoltaic devices exhibits ~10% difference upon right and left circularly polarized light (CPL) excitation, which originates from selective spin transport through the chiral multilayers. In contrast, the in-plane photocurrent response generated by CPL excitation of planar photoconductive devices shows a typical response of chirality-induced circular photogalvanic effect that originates from the Rashba splitting in the electronic bands of these compounds. Here, our studies may lead to potential applications of chiral 2D-HOIPs in optoelectronic devices that are sensitive to the light helicity.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States); Univ. of Utah, Salt Lake City, UT (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0014579; AC36-08GO28308; AC02-76SF00515

OSTI ID:: 1724294

Alternate ID(s):: OSTI ID: 1762432; OSTI ID: 1762689; OSTI ID: 1778264

Report Number(s):: NREL/JA-5900-77172

Journal Information:: ACS Nano, Journal Name: ACS Nano Vol. 15 Journal Issue: 1; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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71 CLASSICAL AND QUANTUM MECHANICS
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Title: Spin-Dependent Photovoltaic and Photogalvanic Responses of Optoelectronic Devices Based on Chiral Two-Dimensional Hybrid Organic–Inorganic Perovskites

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