Growth of (InGa)-(AsP) Nanowires by MOCVD.
Conference
·
OSTI ID:1721571
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, Livermore, CA
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1721571
- Report Number(s):
- SAND2007-3798P; 522474
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth of (InGa)-(AsP) Nanowires by MOCVD.
Influence of Deep Level Defects and Nanowire Width on the Photoconductivity of MOCVD GaN Nanowires.
MOCVD Growth of AlGaN Alloys for Power Transistors (invited).
Conference
·
Wed Aug 01 00:00:00 EDT 2007
·
OSTI ID:1721383
Influence of Deep Level Defects and Nanowire Width on the Photoconductivity of MOCVD GaN Nanowires.
Conference
·
Fri Aug 01 00:00:00 EDT 2008
·
OSTI ID:1707772
MOCVD Growth of AlGaN Alloys for Power Transistors (invited).
Conference
·
Wed May 01 00:00:00 EDT 2019
·
OSTI ID:1645266