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Title: Understanding GaN Nucleation Layer Evolution on Sapphire and its Impact on GaN Dislocation Density (invited).

Conference ·
OSTI ID:1720293

Abstract not provided.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1720293
Report Number(s):
SAND2007-7332P; 521390
Resource Relation:
Conference: Proposed for presentation at the Photonics Asia (SPIE and Chinese Optical Society) Symposium on Solid State Lighting held November 11-15, 2007 in Beijing, CHINA.
Country of Publication:
United States
Language:
English

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