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Materials Data on V2O5 by Materials Project

Dataset ·
DOI:https://doi.org/10.17188/1718488· OSTI ID:1718488
Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations
Research Organization:
LBNL Materials Project; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Contributing Organization:
The Materials Project; MIT; UC Berkeley; Duke; U Louvain
DOE Contract Number:
AC02-05CH11231
OSTI ID:
1718488
Report Number(s):
mp-1245171
Country of Publication:
United States
Language:
English

References (2)

Effect of vanadium doping on sintering and dielectric properties of strontium barium niobate ceramics journal April 2009
High sensitivity extended gate effect transistor based on V2O5 nanorods journal September 2016

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