Materials Data on V2O5 by Materials Project
Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations
- Research Organization:
- LBNL Materials Project; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Contributing Organization:
- The Materials Project; MIT; UC Berkeley; Duke; U Louvain
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1718488
- Report Number(s):
- mp-1245171
- Country of Publication:
- United States
- Language:
- English
Effect of vanadium doping on sintering and dielectric properties of strontium barium niobate ceramics
|
journal | April 2009 |
High sensitivity extended gate effect transistor based on V2O5 nanorods
|
journal | September 2016 |
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