Solid-phase hetero epitaxial growth of α-phase formamidinium perovskite

Lee, Jin-Wook; Tan, Shaun; Han, Tae-Hee; Wang, Rui; Zhang, Lizhi; Park, Changwon; Yoon, Mina; Choi, Chungseok; Xu, Mingjie; Liao, Michael E.; Lee, Sung-Joon; Nuryyeva, Selbi; Zhu, Chenhui; Huynh, Kenny; Goorsky, Mark S.; Huang, Yu; Pan, Xiaoqing; Yang, Yang

doi:10.1038/s41467-020-19237-3

Solid-phase hetero epitaxial growth of α-phase formamidinium perovskite

Journal Article · Mon Nov 02 00:00:00 EST 2020 · Nature Communications

DOI:https://doi.org/10.1038/s41467-020-19237-3· OSTI ID:1695699

Lee, Jin-Wook ^[1]; ^[2]; Han, Tae-Hee ^[3]; ^[2]; Zhang, Lizhi ^[4]; Park, Changwon ^[4]; ^[4]; ^[2]; Xu, Mingjie ^[5]; ^[2]; ^[2]; Nuryyeva, Selbi ^[2]; Zhu, Chenhui ^[6]; Huynh, Kenny ^[2]; Goorsky, Mark S. ^[2]; ^[2]; ^[5]; ^[2]

Univ. of California, Los Angeles, CA (United States); Sungkyunkwan Univ., Suwon (Korea); University of California, Los Angeles
Univ. of California, Los Angeles, CA (United States)
Univ. of California, Los Angeles, CA (United States); Hanyang Univ., Seoul (Korea)
Univ. of Tennessee, Knoxville, TN (United States)
Univ. of California, Irvine, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Conventional epitaxy of semiconductor films requires a compatible single crystalline substrate and precisely controlled growth conditions, which limit the price competitiveness and versatility of the process. We demonstrate substrate-tolerant nano-heteroepitaxy (NHE) of high-quality formamidinium-lead-tri-iodide (FAPbI₃) perovskite films. The layered perovskite templates the solid-state phase conversion of FAPbI₃ from its hexagonal non-perovskite phase to the cubic perovskite polymorph, where the growth kinetics are controlled by a synergistic effect between strain and entropy. The slow heteroepitaxial crystal growth enlarged the perovskite crystals by 10-fold with a reduced defect density and strong preferred orientation. This NHE is readily applicable to various substrates used for devices. The proof-of-concept solar cell and light-emitting diode devices based on the NHE-FAPbI₃ showed efficiencies and stabilities superior to those of devices fabricated without NHE.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS) and Oak Ridge Leadership Computing Facility (OLCF); Univ. of California, Los Angeles, CA (United States)

Sponsoring Organization:: Ministry of Science, ICT and Future Planning (MSIT); National Research Foundation of Korea (NRF); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; USDOE Office of Science (SC); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231; AC05-00OR22725; EE0008751

OSTI ID:: 1695699

Alternate ID(s):: OSTI ID: 1827978
OSTI ID: 1775199

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 11; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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