The Concept of Negative Capacitance in Ionically Conductive Van der Waals Ferroelectrics

Neumayer, Sabine M.; Tao, Lei; O'Hara, Andrew; Susner, Michael A.; McGuire, Michael A.; Maksymovych, Petro; Pantelides, Sokrates T.; Balke, Nina

doi:10.1002/aenm.202001726

Title: The Concept of Negative Capacitance in Ionically Conductive Van der Waals Ferroelectrics

Journal Article · Thu Sep 03 00:00:00 EDT 2020 · Advanced Energy Materials

DOI:https://doi.org/10.1002/aenm.202001726· OSTI ID:1694376

^[1]; Tao, Lei ^[2]; O'Hara, Andrew ^[3]; Susner, Michael A. ^[4];

^[5];

^[1]; Pantelides, Sokrates T. ^[3];

^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Vanderbilt Univ., Nashville, TN (United States); Univ. of Chinese Academy of Sciences & Inst. of Physics, Chinese Academy of Sciences, Beijing (China)
Vanderbilt Univ., Nashville, TN (United States)
Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Abstract Negative capacitance (NC) provides a path to overcome the Boltzmann limit that dictates operating voltages in transistors and, therefore, may open up a path to the challenging proposition of lowering energy consumption and waste heat in nanoelectronic integrated circuits. Typically, NC effects in ferroelectric materials are based on either stabilizing a zero‐polarization state or slowing down ferroelectric switching in order to access NC regimes of the free‐energy distribution. Here, a fundamentally different mechanism for NC, based on CuInP ₂ S ₆ , a van der Waals layered ferrielectric, is demonstrated. Using density functional theory and piezoresponse force microscopy, it is shown that an unusual combination of high Cu‐ion mobility and its crucial role in determining polarization magnitude and orientation (P) leads to a negative slope of the polarization versus the electric field E, dP / dE < 0, which is a requirement for NC. This mechanism for NC is likely to occur in a wide class of materials, offering new possibilities for NC‐based devices. The nanoscale demonstration of this mechanism can be extended to the device‐level by increasing the regions of homogeneous polarization and polarization switching, for example, through strain engineering and carefully selected electric field pulses.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Air Force Research Laboratory

Grant/Contract Number:: AC05-00OR22725; FG02‐09ER46554; AC02‐05CH11231; 19RXCOR052; DE‐FG02‐09ER46554; DE‐AC02‐05CH11231

OSTI ID:: 1694376

Alternate ID(s):: OSTI ID: 1804539

Journal Information:: Advanced Energy Materials, Vol. 10, Issue 39; ISSN 1614-6832

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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