Contact properties of 2D/3D GaSe/Si(1&nbsp;1&nbsp;1) heterostructure

Kim, Junghwan; Min, Kyung-Ah; Cha, Janghwan; Hong, Suklyun

doi:10.1016/j.apsusc.2020.145969

Contact properties of 2D/3D GaSe/Si(1 1 1) heterostructure

Journal Article · Mon Jun 01 00:00:00 EDT 2020 · Applied Surface Science

DOI:https://doi.org/10.1016/j.apsusc.2020.145969· OSTI ID:1691764

; Min, Kyung-Ah; Cha, Janghwan;

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Sponsoring Organization:: USDOE Office of Electricity (OE), Advanced Grid Research & Development. Power Systems Engineering Research

OSTI ID:: 1691764

Journal Information:: Applied Surface Science, Journal Name: Applied Surface Science Journal Issue: C Vol. 516; ISSN 0169-4332

Publisher:: ElsevierCopyright Statement

Country of Publication:: Netherlands

Language:: English

References (46)

GaS and GaSe Ultrathin Layer Transistors Late, Dattatray J.; Liu, Bin; Luo, Jiajun Advanced Materials, Vol. 24, Issue 26 https://doi.org/10.1002/adma.201201361	journal	June 2012
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set Kresse, G.; Furthmüller, J. Computational Materials Science, Vol. 6, Issue 1, p. 15-50 https://doi.org/10.1016/0927-0256(96)00008-0	journal	July 1996
The structure of silicon surfaces from (001) to (111) Baski, A. A.; Erwin, S. C.; Whitman, L. J. Surface Science, Vol. 392, Issue 1-3 https://doi.org/10.1016/S0039-6028(97)00499-8	journal	December 1997
Band Alignment at Au/MoS ₂ Contacts: Thickness Dependence of Exfoliated Flakes Sohn, Ahrum; Moon, Hankyoul; Kim, Jayeong The Journal of Physical Chemistry C, Vol. 121, Issue 40 https://doi.org/10.1021/acs.jpcc.7b07511	journal	September 2017
Interlayer Exciton Optoelectronics in a 2D Heterostructure p–n Junction Ross, Jason S.; Rivera, Pasqual; Schaibley, John Nano Letters, Vol. 17, Issue 2 https://doi.org/10.1021/acs.nanolett.6b03398	journal	January 2017
Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS ₂ van der Waals Heterojunction Diode Dastgeer, Ghulam; Khan, Muhammad Farooq; Nazir, Ghazanfar ACS Applied Materials & Interfaces, Vol. 10, Issue 15 https://doi.org/10.1021/acsami.8b00058	journal	March 2018
Red-to-Ultraviolet Emission Tuning of Two-Dimensional Gallium Sulfide/Selenide Jung, Chan Su; Shojaei, Fazel; Park, Kidong ACS Nano, Vol. 9, Issue 10 https://doi.org/10.1021/acsnano.5b04876	journal	September 2015
The Rise of Two-Dimensional Materials Dubertret, Benoit; Heine, Thomas; Terrones, Mauricio Accounts of Chemical Research, Vol. 48, Issue 1 https://doi.org/10.1021/ar5004434	journal	December 2014
Single-Layer Group-III Monochalcogenide Photocatalysts for Water Splitting Zhuang, Houlong L.; Hennig, Richard G. Chemistry of Materials, Vol. 25, Issue 15 https://doi.org/10.1021/cm401661x	journal	July 2013
Electronic Band Structures of Molybdenum and Tungsten Dichalcogenides by the GW Approach Jiang, Hong The Journal of Physical Chemistry C, Vol. 116, Issue 14 https://doi.org/10.1021/jp300079d	journal	March 2012
Synthesis and Photoresponse of Large GaSe Atomic Layers Lei, Sidong; Ge, Liehui; Liu, Zheng Nano Letters, Vol. 13, Issue 6 https://doi.org/10.1021/nl4010089	journal	May 2013
Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors Hu, PingAn; Wen, Zhenzhong; Wang, Lifeng ACS Nano, Vol. 6, Issue 7 https://doi.org/10.1021/nn300889c	journal	June 2012
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides Jariwala, Deep; Sangwan, Vinod K.; Lauhon, Lincoln J. ACS Nano, Vol. 8, Issue 2 https://doi.org/10.1021/nn500064s	journal	January 2014
A subthermionic tunnel field-effect transistor with an atomically thin channel Sarkar, Deblina; Xie, Xuejun; Liu, Wei Nature, Vol. 526, Issue 7571 https://doi.org/10.1038/nature15387	journal	September 2015
The rise of graphene Geim, A. K.; Novoselov, K. S. Nature Materials, Vol. 6, Issue 3, p. 183-191 https://doi.org/10.1038/nmat1849	journal	March 2007
Mixed-dimensional van der Waals heterostructures Jariwala, Deep; Marks, Tobin J.; Hersam, Mark C. Nature Materials, Vol. 16, Issue 2 https://doi.org/10.1038/nmat4703	journal	August 2016
Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics Georgiou, Thanasis; Jalil, Rashid; Belle, Branson D. Nature Nanotechnology, Vol. 8, Issue 2 https://doi.org/10.1038/nnano.2012.224	journal	December 2012
Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures Mishchenko, A.; Tu, J. S.; Cao, Y. Nature Nanotechnology, Vol. 9, Issue 10 https://doi.org/10.1038/nnano.2014.187	journal	September 2014
Black phosphorus field-effect transistors Li, Likai; Yu, Yijun; Ye, Guo Jun Nature Nanotechnology, Vol. 9, Issue 5 https://doi.org/10.1038/nnano.2014.35	journal	March 2014
Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides Mak, Kin Fai; Shan, Jie Nature Photonics, Vol. 10, Issue 4 https://doi.org/10.1038/nphoton.2015.282	journal	March 2016
Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors Li, Song-Lin; Tsukagoshi, Kazuhito; Orgiu, Emanuele Chemical Society Reviews, Vol. 45, Issue 1 https://doi.org/10.1039/C5CS00517E	journal	January 2016
Mixed-dimensional 2D/3D heterojunctions between MoS ₂ and Si(100) Choi, Hyunsoo; Min, Kyung-Ah; Cha, Janghwan Physical Chemistry Chemical Physics, Vol. 20, Issue 39 https://doi.org/10.1039/C8CP05201H	journal	January 2018
Elastic properties and breaking strengths of GaS, GaSe and GaTe nanosheets Chitara, Basant; Ya'akobovitz, Assaf Nanoscale, Vol. 10, Issue 27 https://doi.org/10.1039/C8NR01065J	journal	January 2018
A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu Grimme, Stefan; Antony, Jens; Ehrlich, Stephan The Journal of Chemical Physics, Vol. 132, Issue 15 https://doi.org/10.1063/1.3382344	journal	April 2010
Band offsets and heterostructures of two-dimensional semiconductors Kang, Jun; Tongay, Sefaattin; Zhou, Jian Applied Physics Letters, Vol. 102, Issue 1 https://doi.org/10.1063/1.4774090	journal	January 2013
Electrical and photovoltaic characteristics of MoS ₂ /Si p-n junctions Hao, Lanzhong; Liu, Yunjie; Gao, Wei Journal of Applied Physics, Vol. 117, Issue 11 https://doi.org/10.1063/1.4915951	journal	March 2015
Metal-induced gap states in passivating metal/silicon contacts Sajjad, Muhammad; Yang, Xinbo; Altermatt, Pietro Applied Physics Letters, Vol. 114, Issue 7 https://doi.org/10.1063/1.5066423	journal	February 2019
Van der Waals contribution to the binding energy of noble metals Richardson, D. D.; Mahanty, J. Journal of Physics C: Solid State Physics, Vol. 10, Issue 20 https://doi.org/10.1088/0022-3719/10/20/006	journal	October 1977
Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector Ko, Pil Ju; Abderrahmane, Abdelkader; Takamura, Tsukasa Nanotechnology, Vol. 27, Issue 32 https://doi.org/10.1088/0957-4484/27/32/325202	journal	June 2016
Solution-processed, hybrid 2D/3D MoS ₂ /Si heterostructures with superior junction characteristics Mukherjee, S.; Biswas, S.; Das, S. Nanotechnology, Vol. 28, Issue 13 https://doi.org/10.1088/1361-6528/aa5e42	journal	February 2017
Van der Waals heterojunction diode composed of WS ₂ flake placed on p-type Si substrate Aftab, Sikandar; Khan, M. Farooq; Min, Kyung-Ah Nanotechnology, Vol. 29, Issue 4 https://doi.org/10.1088/1361-6528/aa9eb8	journal	December 2017
Self-Consistent Equations Including Exchange and Correlation Effects Kohn, W.; Sham, L. J. Physical Review, Vol. 140, Issue 4A, p. A1133-A1138 https://doi.org/10.1103/PhysRev.140.A1133	journal	November 1965
Projector augmented-wave method Blöchl, P. E. Physical Review B, Vol. 50, Issue 24, p. 17953-17979 https://doi.org/10.1103/PhysRevB.50.17953	journal	December 1994
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
From ultrasoft pseudopotentials to the projector augmented-wave method Kresse, G.; Joubert, D. Physical Review B, Vol. 59, Issue 3, p. 1758-1775 https://doi.org/10.1103/PhysRevB.59.1758	journal	January 1999
Metal-induced gap states and Schottky barrier heights at nonreactive GaN/noble-metal interfaces Picozzi, S.; Continenza, A.; Satta, G. Physical Review B, Vol. 61, Issue 24 https://doi.org/10.1103/PhysRevB.61.16736	journal	June 2000
Van der Waals binding energies in graphitic structures Girifalco, L. A.; Hodak, Miroslav Physical Review B, Vol. 65, Issue 12 https://doi.org/10.1103/PhysRevB.65.125404	journal	February 2002
Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching Özçelik, V. Ongun; Azadani, Javad G.; Yang, Ce Physical Review B, Vol. 94, Issue 3 https://doi.org/10.1103/PhysRevB.94.035125	journal	July 2016
Band offset formation at semiconductor heterojunctions through density-based minimization of interface energy Tung, Raymond T.; Kronik, Leeor Physical Review B, Vol. 94, Issue 7 https://doi.org/10.1103/PhysRevB.94.075310	journal	August 2016
Structural and electronic properties of monolayer group III monochalcogenides Demirci, S.; Avazlı, N.; Durgun, E. Physical Review B, Vol. 95, Issue 11 https://doi.org/10.1103/PhysRevB.95.115409	journal	March 2017
Generalized Gradient Approximation Made Simple Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868 https://doi.org/10.1103/PhysRevLett.77.3865	journal	October 1996
The electronic properties of graphene Castro Neto, A. H.; Guinea, F.; Peres, N. M. R. Reviews of Modern Physics, Vol. 81, Issue 1, p. 109-162 https://doi.org/10.1103/RevModPhys.81.109	journal	January 2009
Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier Yang, H.; Heo, J.; Park, S. Science, Vol. 336, Issue 6085 https://doi.org/10.1126/science.1220527	journal	May 2012
Atomic Structure of Hydrogen-Terminated Si(111) Surfaces by Hydrofluoric Acid Treatments Morita, Yukinori; Miki, Kazushi; Tokumoto, Hiroshi Japanese Journal of Applied Physics, Vol. 30, Issue Part 1, No. 12B https://doi.org/10.1143/JJAP.30.3570	journal	December 1991
Metal-induced gap states at insulator/metal interfaces Kiguchi, Manabu; Saiki, Koichiro e-Journal of Surface Science and Nanotechnology, Vol. 2 https://doi.org/10.1380/ejssnt.2004.191	journal	January 2004
Thermal properties of graphene: Fundamentals and applications Pop, Eric; Varshney, Vikas; Roy, Ajit K. MRS Bulletin, Vol. 37, Issue 12 https://doi.org/10.1557/mrs.2012.203	journal	November 2012

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