Full Control of Polarization in Ferroelectric Thin Films Using Growth Temperature to Modulate Defects
- Department of Quantum Matter Physics University of Geneva 24 Quai Ernest‐Ansermet Geneva 4 CH‐1211 Switzerland
- Department of Quantum Matter Physics University of Geneva 24 Quai Ernest‐Ansermet Geneva 4 CH‐1211 Switzerland, School of Chemistry University of St Andrews Fife Scotland KY16 9ST UK
- School of Chemistry University of St Andrews Fife Scotland KY16 9ST UK
- Department of Materials Science and Engineering University of California at Berkeley Berkeley CA 94720 USA
- Department of Materials Science and Engineering University of California at Berkeley Berkeley CA 94720 USA, Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
Abstract Deterministic control of the intrinsic polarization state of ferroelectric thin films is essential for device applications. Independently of the well‐established role of electrostatic boundary conditions and epitaxial strain, the importance of growth temperature as a tool to stabilize a target polarization state during thin film growth is shown here. Full control of the intrinsic polarization orientation of PbTiO 3 thin films is demonstrated—from monodomain up, through polydomain, to monodomain down as imaged by piezoresponse force microscopy—using changes in the film growth temperature. X‐ray diffraction and scanning transmission electron microscopy reveal a variation of c ‐axis related to out‐of‐plane strain gradients. These measurements, supported by Ginzburg–Landau–Devonshire free energy calculations and Rutherford backscattering spectroscopy, point to a defect mediated polarization gradient initiated by a temperature dependent effective built‐in field during growth, allowing polarization control not only under specific growth conditions, but ex‐situ, for subsequent processing and device applications.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF); Engineering and Physical Sciences Research Council (EPSRC); Swiss National Science Foundation (SNSF); USDOE
- Grant/Contract Number:
- AC02-05CH11231; DMR-1708615; EP/R023751/1; EP/L017008/1; 200021_178782
- OSTI ID:
- 1690299
- Alternate ID(s):
- OSTI ID: 1764551; OSTI ID: 1785788
- Journal Information:
- Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Vol. 6 Journal Issue: 12; ISSN 2199-160X
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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