How a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-Tc cuprates, we study the single-particle spectrum for the doped Hubbard model using cluster perturbation theory on superclusters. Starting from extremely low doping, we identify a heavily renormalized quasiparticle dispersion that immediately develops across the Fermi level, and a weakening polaronic side band at higher binding energy. The quasiparticle spectral weight roughly grows at twice the rate of doping in the low doping regime, but this rate is halved at optimal doping. In the heavily doped regime, we find both strong electron-hole asymmetry and a persistent presence of Mott spectral features. Finally, we discuss the applicability of the single-band Hubbard model to describe the evolution of nodal spectra measured by angle-resolved photoemission spectroscopy (ARPES) on the single-layer cuprate La2–xSrxCuO4 (0 ≤ x ≤ 0.15). This work benchmarks the predictive power of the Hubbard model for electronic properties of high-Tc cuprates.
@article{osti_1673830,
author = {Wang, Yao and He, Yu and Wohlfeld, Krzysztof and Hashimoto, Makoto and Huang, Edwin W. and Lu, Donghui and Mo, Sung-Kwan and Komiya, Seiki and Jia, Chunjing and Moritz, Brian and others},
title = {Emergence of quasiparticles in a doped Mott insulator},
annote = {How a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-Tc cuprates, we study the single-particle spectrum for the doped Hubbard model using cluster perturbation theory on superclusters. Starting from extremely low doping, we identify a heavily renormalized quasiparticle dispersion that immediately develops across the Fermi level, and a weakening polaronic side band at higher binding energy. The quasiparticle spectral weight roughly grows at twice the rate of doping in the low doping regime, but this rate is halved at optimal doping. In the heavily doped regime, we find both strong electron-hole asymmetry and a persistent presence of Mott spectral features. Finally, we discuss the applicability of the single-band Hubbard model to describe the evolution of nodal spectra measured by angle-resolved photoemission spectroscopy (ARPES) on the single-layer cuprate La2–xSrxCuO4 (0 ≤ x ≤ 0.15). This work benchmarks the predictive power of the Hubbard model for electronic properties of high-Tc cuprates.},
doi = {10.1038/s42005-020-00480-5},
url = {https://www.osti.gov/biblio/1673830},
journal = {Communications Physics},
issn = {ISSN 2399-3650},
number = {1},
volume = {3},
place = {United States},
publisher = {Springer Nature},
year = {2020},
month = {11}}
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC) and Advanced Light Source (ALS); SLAC National Accelerator Laboratory, Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL); Stanford Univ., CA (United States)
Sponsoring Organization:
Gordon and Betty Moore Foundation; Miller Institute for Basic Research in Science; National Science Centre of Poland (NCN); National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
LECTURES ON THE PHYSICS OF STRONGLY CORRELATED SYSTEMS XVII: Seventeenth Training Course in the Physics of Strongly Correlated Systems, AIP Conference Proceedingshttps://doi.org/10.1063/1.4818402