Materials Data on AlGaN2 by Materials Project
GaAlN2 is Lavarevi\'{c}ite-like structured and crystallizes in the trigonal P3m1 space group. The structure is three-dimensional. Ga3+ is bonded to four N3- atoms to form GaN4 tetrahedra that share corners with six equivalent GaN4 tetrahedra and corners with six equivalent AlN4 tetrahedra. There is three shorter (1.95 Å) and one longer (1.98 Å) Ga–N bond length. Al3+ is bonded to four N3- atoms to form AlN4 tetrahedra that share corners with six equivalent GaN4 tetrahedra and corners with six equivalent AlN4 tetrahedra. There is one shorter (1.91 Å) and three longer (1.92 Å) Al–N bond length. There are two inequivalent N3- sites. In the first N3- site, N3- is bonded to one Ga3+ and three equivalent Al3+ atoms to form corner-sharing NAl3Ga tetrahedra. In the second N3- site, N3- is bonded to three equivalent Ga3+ and one Al3+ atom to form corner-sharing NAlGa3 tetrahedra.
- Research Organization:
- LBNL Materials Project; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Contributing Organization:
- The Materials Project; MIT; UC Berkeley; Duke; U Louvain
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1672169
- Report Number(s):
- mp-1228894
- Country of Publication:
- United States
- Language:
- English
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