Distribution of Deep Level Defects in InGaN/GaN LEDs and their Dependence on In Alloying.
Conference
·
OSTI ID:1671589
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1671589
- Report Number(s):
- SAND2013-7490P; 471135
- Resource Relation:
- Conference: Proposed for presentation at the International Conference on Nitride Semiconductors 2013 held August 25-30, 2013 in Washington, DC.
- Country of Publication:
- United States
- Language:
- English
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