Gas Ingress and Egress of MEMS Multi-Chip Modules and MEMS Devices

Fang, Lu; Alexander Menk, Lyle

doi:10.11648/j.am.20190804.17

Title: Gas Ingress and Egress of MEMS Multi-Chip Modules and MEMS Devices

Journal Article · Fri Dec 13 00:00:00 EST 2019 · Advances in Materials

DOI:https://doi.org/10.11648/j.am.20190804.17· OSTI ID:1670730

Fang, Lu ^[1]; Alexander Menk, Lyle ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Department of Microsystems Integration

Hermetic microcircuit packaging was the dominant method of protecting semiconductor devices in the 1960s and 1970s. After losing majority market sectors to plastic encapsulated microelectronics over the last a few decades, hermetic packaging remains the preferred method of protecting semiconductor devices for critical applications such as in military, space, and medical fields, where components and systems are required to serve for several decades. MEMS devices impose additional challenges to packaging by requiring specific internal cavity pressures to function properly or deliver the needed quality (Q) factors. In MEMS multichip modules, internal pressure requirement conflicts arise when different MEMS devices require different internal gases and pressures. The authors developed a closed-formed equation to model pressure changes of hermetic enclosures due to gas ingression. This article expands the authors mathematical model to calculate gas pressure of a MEMS multichip module package as well as those of MEMS devices inside the multichip module package. These equations are not only capable of calculating service lifetimes of MEMS devices and multi-chip modules but can also help develop MEMS device packaging strategies to extend the service life of MEMS multi-chip modules.

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