Dynamic Hydride Vapor Phase Epitaxy of III-V Materials for Photovoltaics Applications: Preprint
We demonstrate the uniqueness of Dynamic Hydride Vapor Phase Epitaxy (D-HVPE) to deposit III-V materials for high efficiency and potentially low-cost photovoltaics applications. Unlike traditional HVPE, D-HVPE allows for the deposition of relatively complex heterostructures and devices at high growth rates. We recently achieved record growth rates > 500 µm/h for GaAs and >200 µm/h for GaInP in our D-HVPE, and have not yet reached a growth rate limit for either material. We grew single junction GaAs solar cells at growth rates up to 309 µm/h without significant degradation of solar cell performance. We also demonstrate growth of Al-containing III-V materials in HVPE, a capability that makes D-HVPE more attractive for applications beyond photovoltaics.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1669525
- Report Number(s):
- NREL/CP-5900-76122; MainId:6448; UUID:78b91d65-614f-ea11-9c31-ac162d87dfe5; MainAdminID:15164
- Resource Relation:
- Conference: Prepared for Compound Semiconductor Week (CSW) 2020, 17-21 May 2020, Stockholm, Sweden
- Country of Publication:
- United States
- Language:
- English
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