Materials Data on Y9Ga5S21 by Materials Project

Dataset · Sat May 30 04:00:00 EDT 2020

DOI:https://doi.org/10.17188/1665514· OSTI ID:1665514

Y9Ga5S21 crystallizes in the trigonal R3 space group. The structure is three-dimensional. there are six inequivalent Y3+ sites. In the first Y3+ site, Y3+ is bonded to seven S2- atoms to form distorted YS7 pentagonal bipyramids that share corners with three YS7 pentagonal bipyramids, corners with two GaS4 tetrahedra, edges with two YS7 pentagonal bipyramids, an edgeedge with one GaS4 tetrahedra, and a faceface with one GaS6 octahedra. There are a spread of Y–S bond distances ranging from 2.78–2.94 Å. In the second Y3+ site, Y3+ is bonded in a 7-coordinate geometry to seven S2- atoms. There are a spread of Y–S bond distances ranging from 2.74–3.02 Å. In the third Y3+ site, Y3+ is bonded to seven S2- atoms to form distorted YS7 pentagonal bipyramids that share a cornercorner with one GaS6 octahedra, corners with three YS7 pentagonal bipyramids, corners with two GaS4 tetrahedra, an edgeedge with one YS7 pentagonal bipyramid, and an edgeedge with one GaS4 tetrahedra. The corner-sharing octahedral tilt angles are 36°. There are a spread of Y–S bond distances ranging from 2.75–2.98 Å. In the fourth Y3+ site, Y3+ is bonded in a 7-coordinate geometry to seven S2- atoms. There are a spread of Y–S bond distances ranging from 2.75–3.03 Å. In the fifth Y3+ site, Y3+ is bonded in a 7-coordinate geometry to seven S2- atoms. There are a spread of Y–S bond distances ranging from 2.75–3.00 Å. In the sixth Y3+ site, Y3+ is bonded to seven S2- atoms to form distorted YS7 pentagonal bipyramids that share a cornercorner with one GaS6 octahedra, corners with four YS7 pentagonal bipyramids, corners with two GaS4 tetrahedra, an edgeedge with one YS7 pentagonal bipyramid, and an edgeedge with one GaS4 tetrahedra. The corner-sharing octahedral tilt angles are 36°. There are a spread of Y–S bond distances ranging from 2.75–3.00 Å. There are six inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with three YS7 pentagonal bipyramids and edges with two YS7 pentagonal bipyramids. There are a spread of Ga–S bond distances ranging from 2.27–2.30 Å. In the second Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with three YS7 pentagonal bipyramids and an edgeedge with one YS7 pentagonal bipyramid. There are a spread of Ga–S bond distances ranging from 2.27–2.30 Å. In the third Ga3+ site, Ga3+ is bonded to six S2- atoms to form GaS6 octahedra that share corners with three equivalent YS7 pentagonal bipyramids and faces with three equivalent YS7 pentagonal bipyramids. All Ga–S bond lengths are 2.49 Å. In the fourth Ga3+ site, Ga3+ is bonded in a 3-coordinate geometry to six S2- atoms. There are three shorter (2.26 Å) and three longer (2.94 Å) Ga–S bond lengths. In the fifth Ga3+ site, Ga3+ is bonded in a 3-coordinate geometry to six S2- atoms. There are three shorter (2.25 Å) and three longer (2.96 Å) Ga–S bond lengths. In the sixth Ga3+ site, Ga3+ is bonded to six S2- atoms to form GaS6 octahedra that share corners with three equivalent YS7 pentagonal bipyramids. There are three shorter (2.48 Å) and three longer (2.49 Å) Ga–S bond lengths. There are fourteen inequivalent S2- sites. In the first S2- site, S2- is bonded in a distorted rectangular see-saw-like geometry to three Y3+ and one Ga3+ atom. In the second S2- site, S2- is bonded in a distorted rectangular see-saw-like geometry to three Y3+ and one Ga3+ atom. In the third S2- site, S2- is bonded in a distorted rectangular see-saw-like geometry to three Y3+ and one Ga3+ atom. In the fourth S2- site, S2- is bonded in a distorted rectangular see-saw-like geometry to three Y3+ and one Ga3+ atom. In the fifth S2- site, S2- is bonded in a distorted rectangular see-saw-like geometry to three Y3+ and one Ga3+ atom. In the sixth S2- site, S2- is bonded in a distorted rectangular see-saw-like geometry to three Y3+ and one Ga3+ atom. In the seventh S2- site, S2- is bonded to three Y3+ and one Ga3+ atom to form distorted SY3Ga tetrahedra that share corners with three SY3Ga2 square pyramids and corners with three SY3Ga trigonal pyramids. In the eighth S2- site, S2- is bonded to three Y3+ and one Ga3+ atom to form distorted SY3Ga tetrahedra that share corners with three SY3Ga2 square pyramids and corners with three SY3Ga trigonal pyramids. In the ninth S2- site, S2- is bonded in a 4-coordinate geometry to three Y3+ and one Ga3+ atom. In the tenth S2- site, S2- is bonded to three Y3+ and two Ga3+ atoms to form distorted SY3Ga2 square pyramids that share corners with three SY3Ga tetrahedra, a cornercorner with one SY3Ga trigonal pyramid, edges with two equivalent SY3Ga trigonal pyramids, and faces with two equivalent SY3Ga2 square pyramids. In the eleventh S2- site, S2- is bonded to three Y3+ and one Ga3+ atom to form distorted SY3Ga trigonal pyramids that share a cornercorner with one SY3Ga2 square pyramid, corners with three SY3Ga tetrahedra, edges with two equivalent SY3Ga2 square pyramids, and edges with two equivalent SY3Ga trigonal pyramids. In the twelfth S2- site, S2- is bonded to three Y3+ and two Ga3+ atoms to form distorted SY3Ga2 square pyramids that share corners with three SY3Ga tetrahedra, a cornercorner with one SY3Ga trigonal pyramid, edges with two equivalent SY3Ga trigonal pyramids, and faces with two equivalent SY3Ga2 square pyramids. In the thirteenth S2- site, S2- is bonded to three Y3+ and one Ga3+ atom to form distorted SY3Ga trigonal pyramids that share a cornercorner with one SY3Ga2 square pyramid, corners with three SY3Ga tetrahedra, edges with two equivalent SY3Ga2 square pyramids, and edges with two equivalent SY3Ga trigonal pyramids. In the fourteenth S2- site, S2- is bonded in a 4-coordinate geometry to three Y3+ and one Ga3+ atom.

• Research Organization: LBNL Materials Project; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
• Contributing Organization: The Materials Project; MIT; UC Berkeley; Duke; U Louvain
• DOE Contract Number: AC02-05CH11231
• OSTI ID: 1665514
• Report Number(s): mp-1216508
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Ga-S-Y
Y9Ga5S21
crystal structure