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Interstitial Lithium Doping in BiVO4 Thin Film Photoanode for Enhanced Solar Water Splitting Activity

Journal Article · · Chemistry of Materials

As one of the most promising candidates of photoanode material, bismuth vanadate (BiVO4) has been paid wide attention and achieved remarkable progress. However, the full exploitation of solar-energy-conversion potential of bismuth vanadate (BiVO4) is still limited by poor charge transport. Introducing dopants into BiVO4 has been proved to be a feasible method to improve the photoelectrochemical water splitting performance. In this work, lithium is introduced as an interstitial dopant to crystalline BiVO4 thin film photoanode, with the aid of pulsed laser deposition (PLD). Solid-state transport characterization demonstrates increased carrier density and electron conductivity in BiVO4 bulk due to interstitial lithium doping, which also increased the photocurrent and photon-to-current conversion efficiency both by up to 20% for solar water splitting. Finally, computational results based on density functional theory determine the effect of lithium doping on the electronic and atomic structures of BiVO4 and verify the role of lithium dopant as a shallow donor that improves the conductivity of BiVO4.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
Grant/Contract Number:
SC0012704
OSTI ID:
1661644
Alternate ID(s):
OSTI ID: 1690130
Report Number(s):
BNL--219833-2020-JAAM
Journal Information:
Chemistry of Materials, Journal Name: Chemistry of Materials Journal Issue: 15 Vol. 32; ISSN 0897-4756
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English

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