Univ. of Central Florida, Orlando, FL (United States). CREOL, the College of Optics and Photonics; Univ. of Central Florida, Cocoa, FL (United States). Florida Solar Energy Center; University of Central Florida
Univ. of Central Florida, Orlando, FL (United States). CREOL, the College of Optics and Photonics; Univ. of Central Florida, Cocoa, FL (United States). Florida Solar Energy Center
Case Western Reserve Univ., Cleveland, OH (United States). SDLE Research Center
In this work, spatially resolved characterization methods are used to identify loss mechanisms for common -type silicon solar cell architectures, including multicrystalline aluminum back surface field (Al-BSF), monocrystalline Al-BSF, monocrystalline passivated emitter and rear cells (PERC), and bifacial monocrystalline PERC. The characterization methods used in this work include suns-VOC, photoluminescence imaging, and spatially resolved external quantum efficiency and reflectance measurements. The optical and recombination losses are driven by the material properties, cell processing conditions, and device architecture. These losses are quantified and categorized in terms of underlying mechanisms (e.g., front reflectance, escape reflectance, front recombination, and parasitic optical absorption and recombination in the bulk and rear). The ability to create images of these loss parameters can be used to gain more insight into the materials and manufacturing processes used to produce solar cells, and examples are given in this work to illustrate how these images can help reveal the origin of defects.
Schneller, Eric J., et al. "Spatially resolved characterization of optical and recombination losses for different industrial silicon solar cell architectures." International Journal of Modern Physics B, vol. 34, no. 21, Sep. 2020. https://doi.org/10.1142/s0217979220502045
Schneller, Eric J., Hossain, Mohammad J., Frota, Rafaela, Iqbal, Nafis, Colvin, Dylan, Curran, Alan J., Wang, Menghong, Braid, Jennifer L., Bruckman, Laura S., French, Roger H., Huey, Bryan D., Jaubert, Jean-Nicolas, & Davis, Kristopher O. (2020). Spatially resolved characterization of optical and recombination losses for different industrial silicon solar cell architectures. International Journal of Modern Physics B, 34(21). https://doi.org/10.1142/s0217979220502045
Schneller, Eric J., Hossain, Mohammad J., Frota, Rafaela, et al., "Spatially resolved characterization of optical and recombination losses for different industrial silicon solar cell architectures," International Journal of Modern Physics B 34, no. 21 (2020), https://doi.org/10.1142/s0217979220502045
@article{osti_1661175,
author = {Schneller, Eric J. and Hossain, Mohammad J. and Frota, Rafaela and Iqbal, Nafis and Colvin, Dylan and Curran, Alan J. and Wang, Menghong and Braid, Jennifer L. and Bruckman, Laura S. and French, Roger H. and others},
title = {Spatially resolved characterization of optical and recombination losses for different industrial silicon solar cell architectures},
annote = {In this work, spatially resolved characterization methods are used to identify loss mechanisms for common p -type silicon solar cell architectures, including multicrystalline aluminum back surface field (Al-BSF), monocrystalline Al-BSF, monocrystalline passivated emitter and rear cells (PERC), and bifacial monocrystalline PERC. The characterization methods used in this work include suns-VOC, photoluminescence imaging, and spatially resolved external quantum efficiency and reflectance measurements. The optical and recombination losses are driven by the material properties, cell processing conditions, and device architecture. These losses are quantified and categorized in terms of underlying mechanisms (e.g., front reflectance, escape reflectance, front recombination, and parasitic optical absorption and recombination in the bulk and rear). The ability to create images of these loss parameters can be used to gain more insight into the materials and manufacturing processes used to produce solar cells, and examples are given in this work to illustrate how these images can help reveal the origin of defects.},
doi = {10.1142/s0217979220502045},
url = {https://www.osti.gov/biblio/1661175},
journal = {International Journal of Modern Physics B},
issn = {ISSN 0217-9792},
number = {21},
volume = {34},
place = {United States},
publisher = {World Scientific},
year = {2020},
month = {09}}