Wide Band Gap Chalcogenide Semiconductors

Woods-Robinson, Rachel; Han, Yanbing; Zhang, Hanyu; Ablekim, Tursun; Khan, Imran; Persson, Kristin A.; Zakutayev, Andriy

doi:10.1021/acs.chemrev.9b00600

Title: Wide Band Gap Chalcogenide Semiconductors

Journal Article · Mon Apr 06 00:00:00 EDT 2020 · Chemical Reviews

DOI:https://doi.org/10.1021/acs.chemrev.9b00600· OSTI ID:1659858

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National Renewable Energy Lab. (NREL), Golden, CO (United States). Materials Science Center; Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States). Materials Science Center; Zhengzhou Univ. (China)
National Renewable Energy Lab. (NREL), Golden, CO (United States). Materials Science Center
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Wide band gap semiconductors are essential for today’s electronic devices and energy applications because of their high optical transparency, controllable carrier concentration, and tunable electrical conductivity. The most intensively investigated wide band gap semiconductors are transparent conductive oxides (TCOs), such as tin-doped indium oxide (ITO) and amorphous In–Ga–Zn–O (IGZO), used in displays and solar cells, carbides (e.g., SiC) and nitrides (e.g., GaN) used in power electronics, and emerging halides (e.g., γ-CuI) and 2D electronic materials (e.g., graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out because of their propensity for p-type doping, high mobilities, high valence band positions (i.e., low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent semiconductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (EG > 2 eV) chalcogenide materials—namely, II–VI MCh binaries, CuMCh₂ chalcopyrites, Cu₃MCh₄ sulvanites, mixed-anion layered CuMCh(O,F), and 2D materials—and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. Then, we finally review applications—for example, photovoltaic and photoelectrochemical solar cells, transistors, and light emitting diodes—that employ wide band gap chalcogenides as either an active or passive layer. Overall, by examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this Review aims to inspire continued research on this emerging class of transparent semiconductors and thereby enable future innovations for optoelectronic devices.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: AC36-08GO28308; DGE1106400; DGE175281; AC02-05CH11231

OSTI ID:: 1659858

Alternate ID(s):: OSTI ID: 1766490

Report Number(s):: NREL/JA-5K00-74974; MainId:6847; UUID:bfc7d2fb-26de-e911-9c26-ac162d87dfe5; MainAdminID:13520

Journal Information:: Chemical Reviews, Vol. 120, Issue 9; ISSN 0009-2665

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 196 works

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
chalcogenide materials
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optical properties
semiconductors
transparent semiconductors
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Title: Wide Band Gap Chalcogenide Semiconductors

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