Deciphering the effect of traps on electronic charge transport properties of methylammonium lead tribromide perovskite

Musiienko, Artem; Pipek, Jindřich; Praus, Petr; Brynza, Mykola; Belas, Eduard; Dryzhakov, Bogdan; Du, Mao-Hua; Ahmadi, Mahshid; Grill, Roman

doi:10.1126/sciadv.abb6393

Title: Deciphering the effect of traps on electronic charge transport properties of methylammonium lead tribromide perovskite

Journal Article · Fri Sep 11 00:00:00 EDT 2020 · Science Advances

DOI:https://doi.org/10.1126/sciadv.abb6393· OSTI ID:1659551

^[1];

^[1]; Brynza, Mykola ^[1];

^[1]; Dryzhakov, Bogdan ^[2];

^[3];

^[2]; Grill, Roman ^[1]

Charles University, Faculty of Mathematics and Physics, Institute of Physics, Ke Karlovu 5, CZ-121 16 Prague 2, Czech Republic.
Joint Institute for Advanced Materials, Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996, USA.
Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, TN 37831, USA.

Halide perovskites have undergone remarkable developments as highly efficient optoelectronic materials for a variety of applications. Several studies indicated the critical role of defects on the performance of perovskite devices. However, the parameters of defects and their interplay with free charge carriers remain unclear. In this study, we explored the dynamics of free holes in methylammonium lead tribromide (MAPbBr ₃ ) single crystals using the time-of-flight (ToF) current spectroscopy. By combining ToF spectroscopy and Monte Carlo simulation, three energy states were detected in the bandgap of MAPbBr ₃ . In addition, we found the trapping and detrapping rates of free holes ranging from a few microseconds to hundreds of microseconds. Contrary to previous studies, we revealed a strong detrapping activity of traps. We showed that these traps substantially affect the transport properties of MAPbBr ₃ , including mobility and mobility-lifetime product. Our results provide an insight on charge transport properties of perovskite semiconductors.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; US Department of Homeland Security (DHS); Grant Agency of the Czech Republic; Grant Agency of Charles University

Grant/Contract Number:: AC05-00OR22725; 16DNARI00018-04-0; 1234119; P102/19/11920S

OSTI ID:: 1659551

Alternate ID(s):: OSTI ID: 1661250

Journal Information:: Science Advances, Journal Name: Science Advances Vol. 6 Journal Issue: 37; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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