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Tuning the Mechanical Properties of a Polymer Semiconductor by Modulating Hydrogen Bonding Interactions

Journal Article · · Chemistry of Materials
 [1];  [2];  [3];  [4];  [5];  [5];  [6];  [5];  [5];  [5];  [5];  [5];  [3];  [5]
  1. Stanford Univ., CA (United States); University of Southern Mississippi
  2. Stanford Univ., CA (United States); Tokyo Institute of Technology (Japan)
  3. Univ. of Southern Mississippi, Hattiesburg, MI (United States)
  4. Stanford Univ., CA (United States); Korea Advanced Inst. Science and Technology (KAIST), Daejeon (Korea, Republic of)
  5. Stanford Univ., CA (United States)
  6. Stanford Univ., CA (United States); Yamagata Univ. (Japan)
+ Show Author Affiliations
Conjugation breakers (CBs) with different H-bonding chemistry and linker flexibility are designed and incorporated into a Diketopyrrolopyrrole (DPP)-based conjugated polymer backbone. The effects of H-bonding interactions on polymer semiconductor morphology, mechanical properties and electrical performance are systematically investigated. We observe that CBs with H-bonding self-association constant >0.7 or denser packing tendency are able to induce higher polymer chain aggregation and crystallinity in as-casted thin film, resulting in higher modulus and crack on-set strain. Additionally, the rDoC (relative degree of crystallinity) of the stretched thin film with the highest crack on-set strain only suffers a small decrease, suggesting the main energy dissipation mechanism is the breakage of H-bonding interactions. By contrast, other less stretchable polymer films dissipate strain energy through the breakage of crystalline domains, indicated by drastic decrease in rDoC. Furthermore, we evaluate their electrical performance under mechanical strain in fully stretchable field-effect transistors. The polymer with the highest crack on-set strain has the least degradation in mobility as a function of strain. Overall, these observations suggest that we can aptly tune the mechanical properties in polymer semiconductors by modulating intermolecular interactions, such as H-bonding chemistry and linker flexibility. Such understanding provides molecular design guidelines for future stretchable semiconductors.
Research Organization:
Univ. of Southern Mississippi, Hattiesburg, MI (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Grant/Contract Number:
SC0019361
OSTI ID:
1659427
Journal Information:
Chemistry of Materials, Journal Name: Chemistry of Materials Journal Issue: 13 Vol. 32; ISSN 0897-4756
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English

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