Large thermoelectric figure of merit value of undoped polycrystalline ruthenium sesquisilicide
- Tokyo University of Agriculture and Technology, Koganei, Tokyo 184 (Japan)
- Electrotechnical Laboratory, AIST, MITI, Tsukuba, Ibaraki 305 (Japan)
Ruthenium sesquisilicide (Ru{sub 2}Si{sub 3}) is under development as a thermoelectric material which may have large thermoelectric figure of merit values ({ital Z}). In order to actualize large {ital Z} values, doping experiments by using Bridgman-like method were performed, however, they have not had sufficient results because of their large electrical resistivity values. A hypothesis that plate-like boron-rich precipitations interrupt the current paths was proposed for explaining the large resistivity values of the single crystal sample. In this study sintering method is also proposed in order to prepare the boron-free samples for further investigation on Ru{sub 2}Si{sub 3}. Undoped samples were prepared by sintering, and have two orders of magnitude lower electrical resistivity than that of the single crystal sample. Maximum dimensionless figure of merit ({ital ZT}) value of the undoped samples was about 0.32 up to 900 K, which is about 70% of optimized {ital p}-type silicon-germanium (Si-Ge) thermoelectric material. Seebeck coefficient was 0.39 mVK{sup {minus}1}, the electrical resistivity value was 1.8{times}10{sup {minus}4} {Omega}m, the thermal conductivity value was 2.4 Wm{sup {minus}1}K{sup {minus}1} and {ital Z} was 3.6{times}10{sup {minus}4} K{sup {minus}1} at this temperature. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 165400
- Report Number(s):
- CONF-940830--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 316; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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