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Title: Preparation and thermoelectric properties of {ital p}- and {ital n}-type IrSb{sub 3}

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.46824· OSTI ID:165391
; ;  [1]
  1. Jet Propulsion Laboratory/California Institute of Technology, 4800 Oak Grove Drive, MS 277/212, Pasadena, California 91109 (United States)

IrSb{sub 3} belongs to a large family of compounds with the skutterudite crystal structure (CoAs{sub 3}). The peritectic decomposition temperature of IrSb{sub 3} is 1141 {degree}C. The growth of large crystals of IrSb{sub 3} by conventional growth techniques is not straightforward. Single phase, polycrystalline samples were prepared by a liquid-solid sintering technique. Samples were characterized by microprobe analysis, X-ray diffractometry and density measurements. As-prepared IrSb{sub 3} samples show {ital p}-type conductivity and {ital n}-type samples were prepared by addition of platinum. Seebeck coefficient, electrical resistivity, thermal conductivity and Hall effect measurements were performed at room temperature and up to 600 {degree}C on selected samples. High {ital p}-type mobilities were measured and a maximum of about 1380 cm{sup 2}.V{sup {minus}1} .s{sup {minus}1} was measured on a sample with a carrier concentration of 7.1{times}10{sup 18} cm{sup {minus}3}. {ital N}-type samples have substantially lower mobilities but very large Seebeck coefficients. A bandgap of 1.18 eV was estimated from high temperature electrical resistivity and Hall effect measurements. The hole and electron effective masses were also estimated. Based on the experimental data obtained, the potential of IrSb{sub 3} as a thermoelectric material is discussed. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

Sponsoring Organization:
USDOE
OSTI ID:
165391
Report Number(s):
CONF-940830-; ISSN 0094-243X; TRN: 96:002064
Journal Information:
AIP Conference Proceedings, Vol. 316, Issue 1; Conference: 13. international conference on thermoelectrics, Kansas City, MO (United States), 30 Aug - 1 Sep 1994; Other Information: PBD: 10 Aug 1994
Country of Publication:
United States
Language:
English