High-power erbium-doped fiber laser mode locked by a semiconductor saturable absorber

Journal Article · Wed Mar 01 04:00:00 EST 1995 · Optics Letters

DOI:https://doi.org/10.1364/OL.20.000471· OSTI ID:165155

Barnett, B C; Rahman, L; Islam, M N; Chen, Y C; Bhattacharya, P ^[1]; Riha, W; Reddy, K V; Howe, A T; Stair, K A ^[2]; Iwamura, H ^[3]; Friberg, S R; Mukai, T ^[4]

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1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States)
2. ALC Telecom, Naperville, Illinois 60566-7011 (United States)
3. NTT Optoelectronics Laboratories, Atsugi, Kanagawa 243-01 (Japan)
4. NTT Basic Research Laboratories, Atsugi, Kanagawa 243-01 (Japan)

Using an erbium-doped fiber laser (EDFL) passively mode locked by a semiconductor saturable absorber, we generate 5.5-ps pulses of a 2.3-nJ/pulse, which are more than three times higher in energy than for other reported EDFL`s. We show that, by introduction of a linear loss element within the cavity, multiple pulsing behavior at high pump powers can be suppressed. We also determine the saturable-absorber characteristics---absorbance versus wavelength near band gap---that are necessary to produce short mode-locked pulses.

• Sponsoring Organization: USDOE
• OSTI ID: 165155
• Journal Information: Optics Letters, Journal Name: Optics Letters Journal Issue: 5 Vol. 20; ISSN 0146-9592; ISSN OPLEDP
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
INFRARED RADIATION
MODE LOCKING
POWER RANGE 01-10 KW
PULSE TECHNIQUES
RING LASERS