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Density functional studies of defects and defect-related luminescence in Mg3N2

Journal Article · · Physical Review Materials
Mg3N2 is a promising material for light-emitting-diode applications. However, the microscopic origin of the broad yellow photoluminescence in Mg3N2 remains unknown. In this study, defect properties and defect-related optical transitions are investigated based on the hybrid functional calculation. Our results show that the nitrogen vacancy introduces multiple localized defect states within the band gap, which play a dominant role in luminescent properties of Mg3N2 . Common impurities like hydrogen, oxygen, and carbon and their complexes with native defects are also studied. Compared with isolated VMg, VMg -H and VMgON complexes have shallower transition levels. Our calculated optical excitation and emission peaks associated with isolated VN are in good agreement with those observed in experiments. In addition, the impurity CN is also a potential source for the observed yellow emission in Mg3N2 .
Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1649414
Journal Information:
Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 6 Vol. 4; ISSN 2475-9953
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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  • Reshchikov, Michael A.
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