High Penetration Power Electronics Grid: Modeling and Simulation Gap Analysis
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Increased penetration of power electronics in the grid is happening through development of high-power drives (like in Type 3 or 4 wind turbines, industrial drives, etc.), high-voltage direct current (HVdc) systems, flexible alternating current transmission systems (FACTS), energy storage systems (ESSs), inverter-based renewables like solar and wind, electric vehicle chargers, and other technologies. Ongoing research and development in new power electronic technologies including, but not limited to, solid-state power substations (SSPS), extreme fast charging (XFC), solid-state transformers, and multi-port power electronics that integrate multiple sources/loads will further increase penetration levels. To ensure stakeholders can integrate high penetration of power electronic technologies safely and reliably requires tools and methods to assess and evaluate their impact on the grid. Objectives: This report surveys, assesses, and analyzes commercially available and open-source tools that can support the assessment and evaluation of power electronics in future grids with high penetration levels. The study includes aspects that range from power flow analysis to dynamics evaluation (including hardware-in-the-loop – HIL testing) for such systems. The challenges and gaps associated with the current generation of toolsets available to assess the technical impact of introducing high penetration of power electronics are reported. The method is summarized in Figure ES-1.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Electricity Delivery and Energy Reliability (OE)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1649067
- Report Number(s):
- ORNL/TM-2020/1580
- Country of Publication:
- United States
- Language:
- English
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