Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics
[1];
[1];
[2];
[1];
[1];
[1];
[1];
[3];
[4];
[5];
[6];
[6];
[6];
[1]
- Stephenson Institute for Renewable Energy, Deptartment of Physics, University of Liverpool, Chadwick Building, Peach Street, Liverpool L69 7ZF, United Kingdom
- Department of Mathematics, Physics and Electrical Engineering, Northumbria University, Newcastle upon Tyne NE1 8ST, United Kingdom
- Department of Chemistry, Lancaster University, Lancaster LA1 4YB, United Kingdom
- Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, United Kingdom, TIFR Centre for Interdisciplinary Sciences, Tata Institute of Fundamental Research, Hyderabad 500107, India
- Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, United Kingdom
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
Alternatives to lead- and tin-based perovskites for photovoltaics and optoelectronics are sought that do not suffer from the disadvantages of toxicity and low device efficiency of present-day materials. Here we report a study of the double perovskite Cs2TeI6, which we have synthesized in the thin film form for the first time. Exhaustive trials concluded that spin coating CsI and TeI4 using an antisolvent method produced uniform films, confirmed as Cs2 TeI 6 by XRD with Rietveld analysis. They were stable up to 250 °C and had an optical band gap of ~1.5 eV, absorption coefficients of ~6 × 104 cm–1, carrier lifetimes of ~2.6 ns (unpassivated 200 nm film), a work function of 4.95 eV, and a p-type surface conductivity. Vibrational modes probed by Raman and FTIR spectroscopy showed resonances qualitatively consistent with DFT Phonopy-calculated spectra, offering another route for phase confirmation. It was concluded that the material is a candidate for further study as a potential optoelectronic or photovoltaic material.
- Research Organization:
- Univ. of Liverpool (United Kingdom)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; Engineering and Physical Sciences Research Council (EPSRC)
- Grant/Contract Number:
- AC02-05CH11231; EP/P02484X/1; EP/L01551X/1
- OSTI ID:
- 1643183
- Alternate ID(s):
- OSTI ID: 1647591
- Journal Information:
- Chemistry of Materials, Journal Name: Chemistry of Materials Vol. 32 Journal Issue: 15; ISSN 0897-4756
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Lattice Dynamics and Optoelectronic Properties of Vacancy-Ordered Double Perovskite Cs2TeX6 (X = Cl–, Br–, I–) Single Crystals
Defect Tolerance to Intolerance in the Vacancy-Ordered Double Perovskite Semiconductors Cs2SnI6 and Cs2TeI6