The Deeply Depleted Graphene-Insulator-Semiconductor Junction: A Versatile Approach Towards Light Sensing Across the Electromagnetic Spectrum.
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1642722
- Report Number(s):
- SAND2019-11591C; 680035
- Country of Publication:
- United States
- Language:
- English
Similar Records
The Deeply Depleted Graphene-Insulator-Semiconductor Junction: A versatile Approach towards light sensing across the electromagnetic spectrum.
Optical Detection Using Deeply Depleted Graphene-Oxide-Semiconductor Junction.
Characteristic Transconductance of P-Type and N-Type Deeply Depleted Graphene-Insulator-Semiconductor Junction Photodetectors.
Conference
·
Thu Aug 01 00:00:00 EDT 2019
·
OSTI ID:1641762
Optical Detection Using Deeply Depleted Graphene-Oxide-Semiconductor Junction.
Conference
·
Wed Nov 01 00:00:00 EDT 2017
·
OSTI ID:1513600
Characteristic Transconductance of P-Type and N-Type Deeply Depleted Graphene-Insulator-Semiconductor Junction Photodetectors.
Conference
·
Sun Jul 01 00:00:00 EDT 2018
·
OSTI ID:1532452