Long-Range Exciton Diffusion in Two-Dimensional Assemblies of Cesium Lead Bromide Perovskite Nanocrystals

Penzo, Erika; Loiudice, Anna; Barnard, Edward S.; Borys, Nicholas J.; Jurow, Matthew J.; Lorenzon, Monica; Rajzbaum, Igor; Wong, Edward K.; Liu, Yi; Schwartzberg, Adam M.; Cabrini, Stefano; Whitelam, Stephen; Buonsanti, Raffaella; Weber-Bargioni, Alexander

doi:10.1021/acsnano.0c01536

Long-Range Exciton Diffusion in Two-Dimensional Assemblies of Cesium Lead Bromide Perovskite Nanocrystals

Journal Article · Wed May 27 00:00:00 EDT 2020 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.0c01536· OSTI ID:1642691

Penzo, Erika ^[1]; Loiudice, Anna ^[2]; Barnard, Edward S. ^[1]; Borys, Nicholas J. ^[1]; Jurow, Matthew J. ^[1]; ^[1]; Rajzbaum, Igor ^[1]; Wong, Edward K. ^[1]; ^[1]; Schwartzberg, Adam M. ^[1]; Cabrini, Stefano ^[1]; Whitelam, Stephen ^[1]; ^[2]; Weber-Bargioni, Alexander ^[1]

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
École Polytechnique Fédérale de Lausanne (Switzerland)

Förster resonant energy transfer (FRET)-mediated exciton diffusion through artificial nanoscale building block assemblies could be used as an optoelectronic design element to transport energy. However, so far, nanocrystal (NC) systems supported only diffusion lengths of 30 nm, which are too small to be useful in devices. In this work, we demonstrate a FRET-mediated exciton diffusion length of 200 nm with 0.5 cm²/s diffusivity through an ordered, two-dimensional assembly of cesium lead bromide perovskite nanocrystals (CsPbBr₃ PNCs). Exciton diffusion was directly measured via steady-state and time-resolved photoluminescence (PL) microscopy, with physical modeling providing deeper insight into the transport process. This exceptionally efficient exciton transport is facilitated by PNCs' high PL quantum yield, large absorption cross section, and high polarizability, together with minimal energetic and geometric disorder of the assembly. This FRET-mediated exciton diffusion length matches perovskites' optical absorption depth, thus enabling the design of device architectures with improved performances and providing insight into the high conversion efficiencies of PNC-based optoelectronic devices.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1642691

Journal Information:: ACS Nano, Journal Name: ACS Nano Journal Issue: 6 Vol. 14; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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