Simulation and Investigation of Electrothermal Effects in Heterojunction Bipolar Transistors.
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA), Office of Defense Science (NA-113)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1641774
- Report Number(s):
- SAND2019-9967C; 678766
- Country of Publication:
- United States
- Language:
- English
Similar Records
Simulation and Investigation of Electrothermal Effects in Heterojunction Bipolar Transistors.
Simulation and Investigation of Electrothermal and Dose Rate Effects in Heterojunction Bipolar Transistors.
Single Ion Displacement Effects in Heterojunction Bipolar Transistors.
Conference
·
Sat Jun 01 00:00:00 EDT 2019
·
OSTI ID:1641020
Simulation and Investigation of Electrothermal and Dose Rate Effects in Heterojunction Bipolar Transistors.
Conference
·
Thu Feb 28 23:00:00 EST 2019
·
OSTI ID:1639579
Single Ion Displacement Effects in Heterojunction Bipolar Transistors.
Conference
·
Sun Nov 01 00:00:00 EDT 2015
·
OSTI ID:1333251