Gate-defined quantum dots in Ge/SiGe quantum wells as a platform for spin qubits.

Conference · 01 April 2019

DOI:https://doi.org/10.1149/09201.0017ecst· OSTI ID:1639685

Hardy, Will; Su, Yi-Hsin; Chuang, Yen; Maurer, Leon; Brickson, Mitchell; Baczewski, Andrew David; Li, Jiun-Yun; Lu, Tzu-Ming; Luhman, Dwight

Abstract not provided.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: ARO
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1639685
• Report Number(s): SAND2019-3861C; 674456
• Resource Relation: Journal Volume: 92; Journal Issue: 1; Conference: Proposed for presentation at the 236th ECS Meeting held October 13-17, 2019 in Atlanta, GA.
• Country of Publication: United States
• Language: English