Stability in Fluorine-Treated Al-Rich High Electron Mobility Transistors with 85% Al-Barrier Composition.
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1639200
- Report Number(s):
- SAND2019-1463C; 672470
- Country of Publication:
- United States
- Language:
- English
Similar Records
Stability in Fluorine-Treated Al-Rich High Electron Mobility Transistors with 85% Al-Barrier Composition.
Growth and Electrical Properties of Al-Rich AlGaN/AlGaN Heterostructures for High-Electron-Mobility Transistors.
GaN High Electron Mobility Transistor Degradation:Effect of RF Stress.
Conference
·
Thu Feb 28 23:00:00 EST 2019
·
OSTI ID:1639538
Growth and Electrical Properties of Al-Rich AlGaN/AlGaN Heterostructures for High-Electron-Mobility Transistors.
Conference
·
Tue Aug 01 00:00:00 EDT 2017
·
OSTI ID:1464999
GaN High Electron Mobility Transistor Degradation:Effect of RF Stress.
Conference
·
Sat Sep 01 00:00:00 EDT 2012
·
OSTI ID:1116380