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Fully R2R-Printed Carbon-Nanotube-Based Limitless Length of Flexible Active-Matrix for Electrophoretic Display Application

Journal Article · · Advanced Electronic Materials
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  1. Sungkyunkwan Univ., Suwon (South Korea). Dept. of Biophysics, Inst. of Quantum Biophysics
  2. National Research Council Canada, Ottawa, ON (Canada)
  3. Sunchon National Univ. (South Korea). Dept. of Printed Electronics
  4. Tokyo Institute of Technology (Japan). Materials and Structure Lab.
  5. Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences
+ Show Author Affiliations
A limitless-length flexible active-matrix implies that virtually any surface can be rendered into an interactive medium when laminated with electrophoretic or organic light-emitting diode sheets. However, performance, cost, and size limitations of current fabrication technologies and semiconducting materials, typically utilized in thin film transistor (TFT) active matrices (TFT-AMs), have hindered progress, thus preventing the realization of fully printed TFT-AMs on a plastic roll. Here, a new high-purity semiconducting single-walled carbon nanotube (s-SWCNT) ink is prepared by first isolating 99.9% pure s-SWCNTs via conjugated polymer extraction, and then utilizing a ligand-exchange method to formulate a novel hydrophilic gravure-compatible semiconducting ink. Based on the s-SWCNT ink, a fully additive manufacturing process using roll-to-roll (R2R) gravure printing enables the fabrication of a flexible TFT-AM, overcoming performance, cost, and size limitations. TFT-AMs with 10 to 40 PPI resolution where average mobility of 0.23 ± 0.12 cm2 V–1 s–1, average on–off ratio of 104.1, and threshold voltage variation of ±13% are attained. As a proof of concept, an inexpensive and flexible electrophoretic display is demonstrated by simply laminating an electrophoretic sheet onto the R2R gravure-printed s-SWCNT-based TFT-AM.
Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Research Foundation of Korea (NRF); Ministry of Commerce, Industry and Energy, Republic of Korea
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1639005
Journal Information:
Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 4 Vol. 6; ISSN 2199-160X
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English

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36 MATERIALS SCIENCE