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Passivating contacts for crystalline silicon solar cells

Journal Article · · Nature Energy
 [1];  [2];  [1];  [3];  [1]
  1. King Abdullah Univ. of Science and Technology (KAUST), Thuwal (Saudi Arabia). KAUST Solar Center
  2. Univ. of Melbourne (Australia). Dept. of Electrical and Electronic Engineering; Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences
  3. Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences
The global photovoltaic (PV) market is dominated by crystalline silicon (c-Si) based technologies with heavily doped, directly metallized contacts. Recombination of photo-generated electrons and holes at the contact regions is increasingly constraining the power conversion efficiencies of these devices as other performance-limiting energy losses are overcome. To move forward, c-Si PV technologies must implement alternative contacting approaches. Passivating contacts, which incorporate thin films within the contact structure that simultaneously supress recombination and promote charge-carrier selectivity, are a promising next step for the mainstream c-Si PV industry. Here, we review the fundamental physical processes governing contact formation in c-Si. In doing so we identify the role passivating contacts play in increasing c-Si solar cell efficiencies beyond the limitations imposed by heavy doping and direct metallization. Strategies towards the implementation of passivating contacts in industrial environments are discussed.
Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research; Saudi Aramco; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1638999
Journal Information:
Nature Energy, Journal Name: Nature Energy Journal Issue: 11 Vol. 4; ISSN 2058-7546
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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