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Thermoelectric transport of semiconductor full-Heusler VFe 2 Al

Journal Article · · Journal of Materials Chemistry C
DOI:https://doi.org/10.1039/D0TC02659J· OSTI ID:1638528

Seebeck coefficient of VFe 2 Al over a wide range of doping levels can be explained only with a small band-gap ( E g ) range of 0.02–0.04 eV. This E g value is also consistent with high-temperature resistivity data of nominally stoichiometric VFe 2 Al.

Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Grant/Contract Number:
AC02-76SF00515
OSTI ID:
1638528
Journal Information:
Journal of Materials Chemistry C, Journal Name: Journal of Materials Chemistry C Journal Issue: 30 Vol. 8; ISSN JMCCCX; ISSN 2050-7526
Publisher:
Royal Society of Chemistry (RSC)Copyright Statement
Country of Publication:
United Kingdom
Language:
English

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