Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking

Xiao, Jun; Zhu, Hanyu; Wang, Ying; Feng, Wei; Hu, Yunxia; Dasgupta, Arvind; Han, Yimo; Wang, Yuan; Muller, David A.; Martin, Lane W.; Hu, PingAn; Zhang, Xiang

doi:10.1103/physrevlett.120.227601

Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking

Journal Article · Thu May 31 00:00:00 EDT 2018 · Physical Review Letters

DOI:https://doi.org/10.1103/physrevlett.120.227601· OSTI ID:1637280

Xiao, Jun ^[1]; Zhu, Hanyu ^[1]; Wang, Ying ^[1]; Feng, Wei ^[2]; Hu, Yunxia ^[2]; Dasgupta, Arvind ^[3]; Han, Yimo ^[4]; Wang, Yuan ^[1]; Muller, David A. ^[5]; Martin, Lane W. ^[6]; Hu, PingAn ^[2]; Zhang, Xiang ^[7]

Univ. of California, Berkeley, CA (United States). National Science Foundation (NSF) Nanoscale Science and Engineering Center
Harbin Inst. of Technology (China). School of Materials Science and Engineering
Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
Cornell Univ., Ithaca, NY (United States). Dept. of Applied and Engineering Physics
Cornell Univ., Ithaca, NY (United States). Dept. of Applied and Engineering Physics and Kavli Inst. for Nanoscale Sciences
Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
Univ. of California, Berkeley, CA (United States). National Science Foundation (NSF) Nanoscale Science and Engineering Center; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division

Out-of-plane ferroelectricity with a high transition temperature in ultrathin films is important for the exploration of new domain physics and scaling down of memory devices. However, depolarizing electrostatic fields and interfacial chemical bonds can destroy this long-range polar order at two-dimensional (2D) limit. In this paper we report the experimental discovery of the locking between out-of-plane dipoles and in-plane lattice asymmetry in atomically thin In₂Se₃ crystals, a new stabilization mechanism leading to our observation of intrinsic 2D out-of-plane ferroelectricity. Through second harmonic generation spectroscopy and piezoresponse force microscopy, we found switching of out-of-plane electric polarization requires a flip of nonlinear optical polarization that corresponds to the inversion of in-plane lattice orientation. The polar order shows a very high transition temperature (~700Κ) without the assistance of extrinsic screening. This finding of intrinsic 2D ferroelectricity resulting from dipole locking opens up possibilities to explore 2D multiferroic physics and develop ultrahigh density memory devices.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: National Natural Science Foundation of China (NNSFC); National Science Foundation (NSF); US Army Research Office (ARO); USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1637280

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 22 Vol. 120; ISSN 0031-9007; ISSN PRLTAO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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