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Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.5144079· OSTI ID:1634793
 [1];  [2];  [2];  [3];  [2];  [4];  [1];  [5];  [3];  [6]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Air Force Research Lab. (AFRL), Kirtland AFB, NM (United States). Space Vehicles Directorate
  3. Univ. of Western Australia, Crawley, WA (Australia). Dept. of Electrical, Electronic, and Computer Engineering
  4. Air Force Research Lab. (AFRL), Kirtland AFB, NM (United States). Space Vehicles Directorate; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Nuclear Science and Engineering
  5. Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials (CHTM)
  6. The Ohio State Univ., Columbus, OH (United States). Dept. of Electrical and Computer Engineering
+ Show Author Affiliations

Anisotropic carrier transport properties of unintentionally doped InAs/InAs0.65Sb0.35 type-II strain-balanced superlattice material are evaluated using temperature- and field-dependent magnetotransport measurements performed in the vertical direction on a substrate-removed metal-semiconductor-metal device structure. To best isolate the measured transport to the superlattice, device fabrication entails flip-chip bonding and backside device processing to remove the substrate material and deposit contact metal directly to the bottom of an etched mesa. Here, high-resolution mobility spectrum analysis is used to calculate the conductance contribution and corrected mixed vertical-lateral mobility of the two carrier species present. Combining the latter with lateral mobility results from in-plane magnetotransport measurements on identical superlattice material allows for the calculation of the true vertical majority electron and minority hole mobilities; amplitudes of 4.7 ×103 cm2/V s and 1.60 cm2/V s are determined at 77 K, respectively. The temperature-dependent results show that vertical hole mobility rapidly decreases with decreasing temperature due to trap-induced localization and then hopping transport, whereas vertical electron mobility appears phonon scattering-limited at high temperature, giving way to interface roughness scattering at low temperatures, analogous to the lateral electron mobility but with a lower overall magnitude.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); US Army Research Office (ARO); Australian Research Council; Australian National Fabrication Facility (ANFF)
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1634793
Alternate ID(s):
OSTI ID: 1617763
Report Number(s):
SAND--2020-4520J; 685777
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 116; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

References (18)

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Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices journal November 2015
Modified electron beam induced current technique for in(Ga)As/InAsSb superlattice infrared detectors journal August 2017
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Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors journal October 2014
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Vertical Hole Transport and Carrier Localization in InAs / InAs 1 − x Sb x Type-II Superlattice Heterojunction Bipolar Transistors journal February 2017
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Method for the simultaneous determination of vertical and horizontal mobilities in superlattices journal February 2014
More Accurate Quantum Efficiency Damage Factor for Proton-Irradiated, III-V-Based Unipolar Barrier Infrared Detectors journal January 2017

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Related Subjects

36 MATERIALS SCIENCE
electronic transport
flip chip
hall effect
hopping transport
lattice scattering
magnetic fields
phonon scattering
semiconductors
superlattices
transport properties